NTE2953 MOSFET NChannel, Enhancement Mode High Speed Switch TO220 Full Pack Type Package D Applications: ACtoDC Power Supply Equipment Motor Control G Server Power Supplies Synchronous Rectification S Absolute Maximum Ratings: DrainSource Voltage (+25 C T +175 C), V .................................... 100V J DS DrainGate Voltage (+25 C T +175 C, R = 20k ), V ......................... 100V J GS DSR GateSource Voltage, V ......................................................... 20V GS Drain Current, I D (V = 10V, T = +25C) ................................................... 70.4A GS mb (V = 10V, T = +100C) .................................................. 49.7A GS mb Peak Drain Current (Pulsed, t 10 s, T = +25C), I .............................. 281A p mb DM Source Current (T = +25C), I .................................................. 53.2A mb S Peak Source Current (Pulsed, t 10 s, T = +25C), I ............................. 281A p mb SM NonRepetitive Drain Source Avalanche Energy, E DS(AL)S (V = 10V, T = +25C, I = 70.4A, V 100V, Unclamped, R = 50 ) .... 673mJ GS J(init) D sup GS Total Power Dissipation (T = +25C), P .......................................... 63.8W mb D Junction Temperature Range, T ........................................... 55 to +175C J Storage Temperature Range, T .......................................... 55 to +175C stg Peak Soldering Temperature, T ............................................... +260 C sld(M) Maximum Thermal Resistance, Junction toMounting Base, R ................. 2.35K/W th(jmb) Typical Thermal Resistance, Junction toAmbient, R ............................ 55K/W th(ja) Isolation Capacitance (f = 1Mhz), C ............................................... 10pF isol RMS Isolation Voltage, V isol(RMS) (50Hz f 60Hz, RH 65%, Sinusoidal Waveform, Clean and Dust Free) ......... 2500V Rev. 914Electrical Characteristics: Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics DrainSource Breakdown Voltage V V = 0V, I = 250 A, T = +25C 100 V (BR)DSS GS D J 90 V V = 0V, I = 250 A, T = 55C GS D J GateSource Threshold Voltage V V = V , I = 1mA, T = +25C 2.0 3.0 4.0 V GS(th) DS GS D J 1.0 V V = V , I = 1mA, T = +175C DS GS D J V = V , I = 1mA, T = 55C 4.6 V DS GS D J Drain Leakage Current I V = 100V, V = 0, T = +25C 10 A DSS DS GS J 200 A V = 100V, V = 0, T = +100C DS GS J Gate Leakage Current I V = 20V, V = 0V, T = +25C 2 100 nA GSS GS DS J DrainSource ONState Resistance R V = 10V, I = 15A, T = +25C 3.95 4.6 m DS(on) GS D J 6.9 8.1 m V = 10V, I = 15A, T = +100C GS D J 11.05 12.9 m V = 10V, I = 15A, T = +175C GS D J R 0.9 Internal Gate Resistance (AC) f = 1MHz G Dynamic Characteristics Total Gate Charge Q V = 10V, V = 50V, I = 15A 153 nC G(tot) GS DS D GateSource Charge Q 28 nC GS Pre-Threshold Gate-Source Charge Q 25 nC GS(th) Post-Threshold Gate-Source Charge Q 3 nC GS(th-pl) GateDrain Charge Q 40 nC GD GateSource Plateau Voltage V V = 50V, I = 15A 3.5 V GS(pl) DS D Input Capacitance C V = 0V, V = 50V, f = 1MHz, 9900 pF iss GS DS T = +25C J Output Capacitance C 660 pF oss Reverse Transfer Capacitance C 381 pF rss TurnOn Delay Time t V = 50V R = 4 , V = 10V, 35 ns d(on) DS , L GS R = 4.7 , T = +25C G(ext) J Rise Time t 40 ns r TurnOff Delay Time t 170 ns d(off) Fall Time t 71 ns f SourceDrain Diode SourceDrain Voltage V I = 10A, V = 0V, T = +25C 0.72 1.2 V SD S GS J Reverse Recovery Time t I = 10A, dI /dt = 100A/ s 63 ns rr S S Recovered Charge Q V = 0, V = 50V 173 nC r GS DS