NTE2968 MOSFET NChannel, Enhancement Mode High Speed Switch TO3P Type Package Features: D Avalanche Rugged Technology Rugged Gate Oxide Technology Low Input Capacitance Improved Gate Charge G Extended Safe Operating Area Lower Leakage Current S Low Static Drain Source On State Resistance Absolute Maximum Ratings: DrainSource Voltage, V ........................................................ 200V DSS Drain Current, I D Continuous T = +25 C ............................................................... 45A C T = +100 C ............................................................ 27.8A C Pulsed (Note 1) ............................................................. 180A GateSource Voltage, V ......................................................... 30V GS Gate Current (Pulsed), I ........................................................ 1.5A GM Single Pulsed Avalanche Energy (Note 2), E ...................................... 675mJ AS Avalanche Current (Note 1), I ...................................................... 45A AS Repetitive Avalanche Energy (Note 1), E ......................................... 27.8mJ AR Peak Diode Recovery dv/dt (Note 3), dv/dt .......................................... 5.0V/ns Total Power Dissipation (T = +25 C), P ........................................... 278W C D Derate Above 25 C ...................................................... 2.22W/ C Operating Junction Temperature Range, T .................................. 55 to +150 C J Storage Temperature Range, T .......................................... 55 to +150 C stg Maximum Lead Temperature (During Soldering, 1/8 from case, 5sec), T .............. +300 C L Thermal Resistance: Maximum JunctiontoCase, R ........................................ 0.45 C/W thJC Typical CasetoSink, R .............................................. 0.24 C/W thCS Maximum Junction toAmbient, R ...................................... 40 C/W thJA Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 2. L = 0.5mH, I = 45A, V = 25V, R = 25 , Starting T = +25 C. AS DD G J Note 3. I 45A, di/dt 370A/ s, V BV , Starting T = +25 C. SD DD DSS J Rev. 1013Electrical Characteristics: (T = +25 C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit DrainSource Breakdown Voltage BV V = 0V, I = 250 A 200 V DSS GS D Breakdown Voltage Temperature BV/ T I = 250 A 0.20 V/ C J D Coefficient Gate Threshold Voltage V V = 5V, I = 250 A 2.0 4.0 V GS(th) DS D GateSource Leakage Forward I V = 30V 100 nA GSS GS GateSource Leakage Reverse I V = 30V 100 nA GSS GS Zero Gate Voltage Drain Current I V = 200V, V = 0 10 A DSS DS GS V = 160V, T = +150 C 100 A DS C Static DrainSource ON Resistance R V = 10V, I = 22.5A, Note 4 0.065 DS(on) GS D Forward Transconductance g V = 40V, I = 22.5A, Note 4 25.06 mhos fs DS D Input Capacitance C V = 0V, V = 25V, f = 1MHz 3030 3940 pF iss GS DS Output Capacitance C 530 610 pF oss Reverse Transfer Capacitance C 255 295 pF rss TurnOn Delay Time t 22 60 ns V = 100V I = 45A, R = 5.3 , d(on) DD , D G Note 4, Note 5 Rise Time t 22 60 ns r TurnOff Delay Time t 79 170 ns d(off) Fall Time t 36 80 ns f Total Gate Charge Q 117 152 nC V = 10V, I = 45A, V = 160V, g GS D DS Note 4, Note 5 GateSource Charge Q 25 nC gs GateDrain (Miller) Charge Q 48.8 nC gd SourceDrain Diode Ratings and Characteristics Continuous Source Current I (Body Diode) 45 A S Pulse Source Current I (Body Diode) Note 1 180 A SM Diode Forward Voltage V T = +25 C, I = 45A, V = 0V, Note 4 1.5 V SD J S GS Reverse Recovery Time t T = +25 C, I = 45A, dI /dt = 100A/ s 210 ns rr J F F Reverse Recovery Charge Q 1.67 C rr Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 4. Pulse Test: Pulse Width 250 s, Duty Cycle 2%. Note 5. Essentially independent of operating temperature.