NTE2974 MOSFET NChannel, Enhancement Mode High Speed Switch TO220 Isolated Type Package D Features: Low On State Resistance: R = 1.1 Max (V = 10V, I = 3A) DS(on) GS D Low Input Capacitance: C = 1150pF Typ iss High Avalanche Capability Ratings G Isolated TO220 Type Package S Absolute Maximum Ratings: (T = +25 C unless otherwise specified) A DraintoSource Voltage, V ..................................................... 600V DSS GatetoSource Voltage, V ..................................................... 30V GSS Drain Current, I D DC ....................................................................... 6.0A Pulse (Note 1) .............................................................. 24A Total Power Dissipation, P T T = +25 C ................................................................. 35W C T = +25 C ................................................................. 2.0W A Single Avalanche Current (Note 2), I ............................................... 6.0A AS Single Avalanche Energy (Note 2), E ............................................. 12mJ AS Channel Temperature, T ........................................................ +150 C ch Storage Temperature Range, T .......................................... 55 to +150 C stg Note 1. PW 10 s, Duty Cycle 1%. Note 2. Starting T = +25 C, R = 25 , V = 20V 0. ch G GS Electrical Characteristics: (T = +25 C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit DraintoSource OnState Resistance R V = 10V, I = 3A 0.8 1.1 DS(on) GS D GatetoSource Cutoff Voltage V V = 10V, I = 1mA 2.5 3.5 V GS(off) DS D Forward Transfer Admittance y V = 10V, I = 3A 2.0 S fs DS D Drain Leakage Current I V = 600V, V = 0 100 A DSS DS GS GatetoSource Leakage Current I V = 30V, V = 0 100 nA GSS GS DS Rev. 1013Electrical Characteristics (Contd): (T = +25 C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Input Capacitance C V = 10V, V = 0, f = 1MHz 1150 pF iss DS GS Output Capacitance C 260 pF oss Reverse Transfer Capacitance C 60 pF rss TurnOn Delay Time t V = 10V, V = 150V, I = 3A, 15 ns d(on) GS DD D R = 10 , R = 37.5 G L Rise Time t 15 ns r TurnOff Delay Time t 75 ns d(off) Fall Time t 13 ns f Total Gate Charge Q V = 10V, I = 6A, V = 480V 40 nC G GS D DD GatetoSource Charge Q 6 nC GS GatetoDrain Charge Q 20 nC GD Diode Forward Voltage V I = 6A, V = 0 1.0 V F(SD) F GS Reverse Recovery Time t I = 6A, di/dt = 50A/ s 370 ns rr F Reverse Recovery Charge Q 1.5 C rr .420 (10.67) Max .110 (2.79) Isol .147 (3.75) .500 Dia Max (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Gate Source .100 (2.54) Drain