NTE2989 MOSFET NChannel, Enhancement Mode High Speed Switch TO220 Full Pack Type Package Features: D High Speed Switching Low OnResistance No Secondary Breakdown Low Driving Power High Voltage G Repetitive Avalanche Rated Applications: S Switching Regulators UPS DCDC Converters General Purpose Power Amplifier Absolute Maximum Ratings: (T = +25C unless otherwise specified) C DrainSource Voltage, V ......................................................... 600V DS Drain Current, I D Continuous .................................................................. 10A Pulsed ...................................................................... 36A GateSource Voltage, V ......................................................... 30V GS Avalanche Current, Repetitive or Non Repetitive (T +150 C), I ..................... 10A ch AR Avalanche Energy, E .......................................................... 64.7mJ AS Maximum Power Dissipation, P .................................................... 50W D Operating Junction Temperature, T ............................................... +150 C J Storage Temperature Range, T .......................................... 55 to +150C stg Thermal Resistance, Junction toAmbient, R .................................. 62.5 C/W thJA Thermal Resistance, Junction toCase, R ..................................... 2.5 C/W thJC Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit DrainSource Breakdown Voltage V I = 1mA, V = 0V 600 V (BR)DSS D GS Gate Threshold Voltage V I = 1mA, V = V 3.5 4.0 4.5 V GS(th) D DS GS Zero Gate Voltage Drain Current I V = 600V, T = +25C 10 500 A DSS DS ch V = 0V GS T = +125C 0.2 1.0 mA ch Rev. 1013Electrical Characteristics (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit GateSource Leakage Current I V = 30V, V = 0V 10 100 nA GSS GS DS DrainSource OnState Resistance R I = 4.5A, V = 10V 0.85 1.0 DS(on) D GS Forward Transconductance g I = 5A, V = 25V 3 6 S fs D DS Input Capacitance C V = 25V, V = 0V, f = 1MHz 1100 1700 pF iss DS GS Output Capacitance C 170 260 pF oss Reverse Transfer Capacitance C 74 120 pF rss TurnOn Time, t t V = 300V, I = 10A, V = 10V, 25 40 ns on d(on) CC D GS (t = t + t ) R = 10 on d(on) r GS t 70 110 ns r t 75 120 ns TurnOff Time, t ff d(off) o (t = t + t ) off d(off) f t 40 60 ns f Avalanche Capability I L = 100H, T = +25C 10 A AV ch Diode Forward OnVoltage V I = 2 x I , V = 0V, T = +25C 1.0 1.5 V SD F DR GS ch Reverse Recovery Time t 500 ns I = I , V = 0V, rr F DR GS dI /dt = 100A/s, T = +25C F ch Reverse Recovery Charge Q 6.5 C rr .181 (4.6).126 (3.2) Dia Max Max .405 (10.3) .114 (2.9) Max Isol .252 (6.4) .622 (15.0) Max GD S .118 (3.0) Max .531 (13.5) Min .098 (2.5) .100 (2.54)