X-On Electronics has gained recognition as a prominent supplier of NTE299 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE299 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE299 NTE

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Part No.	NTE299
Manufacturer:	NTE
Category:	Bipolar Transistors - BJT
Description:	Transistor: NPN; bipolar; RF; 35V; 1A; 4W; TO202-3; Pout:1.4W
Datasheet:	NTE299 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

20: USD 3.2616 ea
Line Total: USD 65.23

Availability - 0

MOQ: 20 Multiples: 1
Pack Size: 1

NTE299 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Thu. 04 Jul to Wed. 10 Jul MOQ : 20 Multiples : 1	20 : USD 3.2616 50 : USD 1.9389 100 : USD 1.794 200 : USD 1.6603 500 : USD 1.5489

0 Ship by Thu. 04 Jul to Wed. 10 Jul MOQ : 1 Multiples : 1	1 : USD 3.472 3 : USD 3.122 8 : USD 2.268 20 : USD 2.142

Specifications

Manufacturer NTE NTE
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT
Polarisation Bipolar Bipolar
Mounting Tht Tht
Case To202 - 3 To202 - 3
Kind Of Transistor Rf Rf
Type Of Transistor Npn Npn
Output Power 1.4 W 1.4 W
Collector-Emitter Voltage 35 V 35 V
Collector Current 1 A 1 A
Power Dissipation 4 W 4 W
Current Gain 10 To 300 10 To 300

We are delighted to provide the NTE299 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE299 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

NTE299 Silicon NPN Transistor RF Power Amp, Driver Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V EBO Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A C Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4W C C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125C J Storage Temperatur Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +125C stg Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25C/W thJC Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit CollectorBase Breakdown Voltage V I = 1mA, I = 0 75 V (BR)CBO C E CollectorEmitter Breakdown Voltage V I = 10mA, R = 35 V (BR)CEO C BE EmitterBase Breakdown Voltage V I = 1mA, I = 0 4 V (BR)EBO E C Collector Cutoff Current I V = 30V, I = 0 10 A CBO CB E DC Current Gain h V = 10V, I = 0.1A 10 70 300 FE CE C Power Output P V = 12V, f = 27MHz, P = 75mW, 1.2 1.4 W O CC IN I < 166mA C .380 (9.56) .180 (4.57) .132 (3.35) Dia C .500 (12.7) .325 1.200 (9.52) (30.48) Ref .070 (1.78) x 45 .300 Chamf (7.62) .050 (1.27) .400 (10.16) Min CB E .100 (2.54) .100 (2.54)X-ON Electronics Largest Supplier of Electrical and Electronic Components Click to view similar products for Bipolar Transistors - BJT category: Click to view products by NTE manufacturer: Other Similar products are found below : 619691C MCH4017-TL-H MJ15024/WS MJ15025/WS BC546/116 BC556/FSC BC557/116 BSW67A HN7G01FU-A(T5L,F,T NJVMJD148T4G NSVMMBT6520LT1G NTE187A NTE195A NTE2302 NTE2330 NTE2353 NTE316 IMX9T110 NTE63 NTE65 C4460 SBC846BLT3G 2SA1419T-TD-H 2SA1721-O(TE85L,F) 2SA1727TLP 2SA2126-E 2SB1202T-TL-E 2SB1204S-TL-E 2SC5488A- TL-H 2SD2150T100R SP000011176 FMC5AT148 2N2369ADCSM 2SB1202S-TL-E 2SC2412KT146S 2SC4618TLN 2SC5490A-TL-H 2SD1816S-TL-E 2SD1816T-TL-E CMXT2207 TR CPH6501-TL-E MCH4021-TL-E BC557B TTC012(Q) BULD128DT4 JANTX2N3810 Jantx2N5416 US6T6TR KSF350 068071B

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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NTE ELECTRONICS, INC.

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