X-On Electronics has gained recognition as a prominent supplier of NTE2997 MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTE2997 MOSFETs are a product manufactured by NTE. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTE2997 NTE

NTE2997 electronic component of NTE
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See Product Specifications
Part No.NTE2997
Manufacturer: NTE
Category: MOSFETs
Description: Transistor: P-MOSFET; unipolar; 160V; 7A; 100W; TO3PN
Datasheet: NTE2997 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
4: USD 29.2325 ea
Line Total: USD 116.93 
Availability - 3
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 4  Multiples: 1
Pack Size: 1
Availability Price Quantity
3
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 4
Multiples : 1
4 : USD 29.2325
5 : USD 26.575
25 : USD 22.05
50 : USD 21.725
100 : USD 20.4875
250 : USD 19.6375
500 : USD 19.125
1000 : USD 18.6125

   
Manufacturer
Product Category
Polarisation
Kind Of Channel
Features Of Semiconductor Devices
Mounting
Case
Kind Of Package
Type Of Transistor
Drain-Source Voltage
Drain Current
Power Dissipation
Gate-Source Voltage
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE2997 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE2997 and other electronic components in the MOSFETs category and beyond.

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NTE2997 MOSFET PChannel, Enhancement Mode High Speed Switch Features: Good Frequency Characteristics D High Speed Switching Wide Area of Safe Operation Enhancement Mode G Equipped with Gate Protection Diodes S Applications: Low Frequency Power Amplifier Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Drain Source Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V DSX GateSource Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V GSS Drain Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A D Body to Drain Diode Reverse Drain Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A DR Channel Dissiption (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W C CH Channel Temperature T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150 C CH Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit DrainSource Breakdown Voltage V I = 10mA, V = 10V 160 V (BR)DSS D GS GateSource Breakdown Voltage V I = 100A, V = 0 15 V (BR)GSS G DS GateSource Cutoff Voltage V I = 100mA, V = 10V 0.15 1.45 V GS(off) D DS DrainSource Saturation Voltage V I = 7A, V = 0, Note 1 12 V DS(sat) D GS Forward Transfer Admittance y I = 3A, V = 10V, Note 1 0.7 1.0 1.4 S fs D DS Input Capacitance C V = 10V, f = 1MHz, V = 5V 900 pF iss DS GS Output Capacitance C 400 pF oss Reverse Transfer Capacitance C 40 pF rss Equivalent Output Capacitance C V = 0, V = 0V to 480V, Note 5 90 pF oss eq. GS DS TurnOn Time t 230 ns V = 20V, I = 4A on DD D Turn Off Time t 110 ns off Note 1. Pulse test..190 (4.82) .615 (15.62) S .787 (20.0) .591 .126 (15.02) (3.22) Dia .787 (20.0) GS D .215 (5.47)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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