NTE326 Silicon PChannel JFET Transistor General Purpose AF Amplifier TO92 Type Package Absolute Maximum Ratings: (T = +25C unless otherwise specified) A DrainGate Voltage, V ............................................................ 40V DG Reverse Gate Source Voltage, V ................................................. 40V GSR Forward Gate Current, I ........................................................ 10mA G(f) Total Device Dissipation (T = +25C), P ......................................... 310mW A D Derate Above 25 C .................................................... 2.82mW/ C Operating Junction Temperature Range, T .................................. 65 to +135C J Storage Temperature Range, T .......................................... 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics GateSource Breakdown Voltage V I = 10A, V = 0 40 V (BR)GSS G DS Gate Reverse Current I V = 20V, V = 0 5 nA GSS GS DS V = 20V, V = 0, T = +100C 1 A GS DS A GateSource Cutoff Voltage V I = 1A, V = 15V 1.0 7.5 V GS(off) D DS GateSource Voltage V I = 0.2mA, V = 15V 0.8 4.5 V GS D DS ON Characteristics ZeroGateVoltage Drain Current I V = 15V, V = 0, f = 1kHz 2 9 mA DSS DS GS SmallSignal Characteristics Forward Transfer Admittance y V = 15V, V = 0, f = 1kHz 1500 5000 mho fs DS GS Output Admittance y V = 15V, V = 0, f = 1kHz 75 mho os DS GS Input Capacitance C V = 15V, V = 0, f = 1MHz 5 7 pF iss DS GS Reverse Transfer Capacitance C V = 15V, V = 0, f = 1MHz 1 2 pF rss DS GS Functional Characteristics Noise Figure NF V = 15V, V = 0, R = 1M, 1.0 2.5 dB DS GS G f = 100Hz, BW = 1Hz Equivalent ShortCircuit Input Noise e V = 15V, V = 0, f = 100Hz, 60 115 nV/ Hz n DS GS Voltage BW = 1Hz Rev. 216D G S .135 (3.45) Min .210 (5.33) Max Seating Plane .021 (.445) Dia Max .500 (12.7) Min S D G .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max