X-On Electronics has gained recognition as a prominent supplier of NTE452 MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTE452 MOSFETs are a product manufactured by NTE. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTE452 NTE

NTE452 electronic component of NTE
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See Product Specifications
Part No.NTE452
Manufacturer: NTE
Category: MOSFETs
Description: Trans JFET N-CH 30V Si 4-Pin TO-72
Datasheet: NTE452 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 15.022 ea
Line Total: USD 15.02 
Availability - 13
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
13
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 15.022
2 : USD 11.172
3 : USD 11.158
5 : USD 10.556

   
Manufacturer
Product Category
Mounting
Case
Kind Of Channel
Type Of Transistor
Drain-Source Voltage
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We are delighted to provide the NTE452 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE452 and other electronic components in the MOSFETs category and beyond.

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The NTE452 is a silicon 4-pin TO-72 type N-Channel Junction Field Effect Transistor (JFET) manufactured by NTE. It is designed to be used in a wide variety of common-source amplifier and switching applications. The device has an integrated gate-drain diode and is designed with a drain-source voltage rating of 30V, making it suitable for a range of applications with voltage requirements up to 30V. This transistor features low leakage, low distortion, and good linearity and is capable of handling large signal swings. With its on-resistance ratings, it is suitable for data switching and signal line attenuation applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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