X-On Electronics has gained recognition as a prominent supplier of NTE465 MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTE465 MOSFETs are a product manufactured by NTE. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTE465 NTE

NTE465 electronic component of NTE
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See Product Specifications
Part No.NTE465
Manufacturer: NTE
Category: MOSFETs
Description: Transistor: N-MOSFET; 25V; TO72
Datasheet: NTE465 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 16.85 ea
Line Total: USD 84.25 
Availability - 40
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
40
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 5
Multiples : 1
5 : USD 16.85
25 : USD 13.95
50 : USD 13.725
100 : USD 13.125
250 : USD 12.3875
500 : USD 12.0625
1000 : USD 11.75

   
Manufacturer
Product Category
Mounting
Case
Kind Of Channel
Type Of Transistor
Drain-Source Voltage
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE465 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE465 and other electronic components in the MOSFETs category and beyond.

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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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NTE464 (PCh) & NTE465 (NCh) Silicon Complementary MOSFET Transistors Enhancement Mode for Switching Applications TO72 Type Package Absolute Maximum Ratings: DrainSource Voltage, V .......................................................... 25V DS DrainGate Voltage, V ............................................................ 30V DG GateSource Voltage, V ......................................................... 30V GS Gate Current, I .................................................................. 30mA G Total Device Dissipation (T = +25 C), P ......................................... 300mW A D Derate Above 25 C ..................................................... 1.7mW/ C Total Device Dissipation (T = +25 C), P ......................................... 800mW C D Derate Above 25 C .................................................... 4.56mW/ C Operating Junction Temperature, T ............................................... +175 C J Storage Temperature Range, T .......................................... 55 to +175 C stg Electrical Characteristics: (T = +25 C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics DrainSource Breakdown Voltage V I = 10 A, V = 0 25 V (BR)DSX D GS ZeroGateVoltage Drain Current I V = 10V, V = 0, T = +25 C 10 nA DSS DS GS A V = 10V, V = 0, T = +150 C 10 A DS GS A Gate Reverse Current I V = 30V, V = 0 10 pA GSS GS DS ON Characteristics Gate Threshold Voltage V V = 10V, I = 10 A 1 5 V GS(Th) DS D DrainSource OnVoltage V I = 2mA, V = 10V 1 V DS(on) D GS OnState Drain Current I V = 10V, V = 10V 3 mA D(on) GS DS Rev. 1013Electrical Characteristics (Contd): (T = +25 C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit SmallSignal Characteristics DrainSource Resistance NTE464 r V = 10V, I = 0, f = 1kHz 600 ds(on) GS D NTE465 300 Forward Transfer Admittance y V = 10V, I = 2mA, f = 1kHz 1000 mhos fs DS D Input Capacitance C V = 10V, V = 0, f = 140kHz 5 pF iss DS GS Reverse Transfer Capacitance C V = 0, V = 0, f = 140kHz 1.3 pF rss DS GS DrainSubstrate Capacitance NTE464 C V = 10V, f = 140kHz 4 pF d(sub) D(SUB) NTE465 5 pF Switching Characteristics TurnOn Delay t 45 ns I = 2mA, V = 10V, V = 10V d1 D DS GS Rise Time t 65 ns r TurnOff Delay t 60 ns d2 Fall Time t 100 ns f NTE464 .220 (5.58) Dia .185 (4.7) Dia D .190 Case (4.82) .030 (.762) G S .500 (12.7) Min NTE465 .018 (0.45) Dia Gate D Source Drain Case G S 45 Case .040 (1.02)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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