NTE491SM NTE

NTE491 NTE491SM MOSFET NCh, Enhancement Mode High Speed Switch Features: D Available in either TO92 (NTE491) or SOT23 Surface Mount (NTE491SM) Type Package High Density Cell Design for Low R DS(ON) Voltage Controlled Small Signal Switch Rugged and Reliable G High Saturation Current Capability S Absolute Maximum Ratings: DrainSource Voltage, V .......................................................... 60V DS DrainGate Voltage (R = 1M ), V .............................................. 60V GS DGR GateSource Voltage, V GS Continuous ................................................................. 20V NonRepetitive (t 50 s) ................................................... 40V p Drain Current, I D Continuous NTE491 ............................................................... 200mA NTE491SM ............................................................ 115mA Pulsed NTE491 ............................................................... 500mA NTE491SM ............................................................ 800mA Total Device Dissipation (T = +25 C), P A D NTE491 .............................................................. 350mW NTE491SM ........................................................... 200mW Derate above 25 C NTE491 ............................................................ 2.8mW/ C NTE491SM ......................................................... 1.6mW/ C Operating Junction Temperature Range, T .................................. 55 to +150 C J Storage Temperature Range, T .......................................... 55 to +150 C stg Thermal Resistance, Junction toAmbient, R th (JA) NTE491 ............................................................... 312.5 C/W NTE491SM ............................................................. 625 C/W Maximum Lead Temperature (During Soldering, 1/16 from case, 10sec), T ............ +300 C L Rev. 1013Electrical Characteristics: (T = +25 C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics DrainSource Breakdown Voltage V V = 0, I = 10 A 60 V (BR)DSS GS D ZeroGateVoltage Drain Current NTE491 I 1.0 A V = 48V, DSS DS V = 0 GS T = +125 C 1.0 mA J NTE491SM V = 60V, 1.0 A DS V = 0 GS T = +125 C 0.5 mA J GateBody Leakage Current, Forward NTE491 I V = 15V, V = 0 10 nA GSSF GSF DS NTE491SM V = 20V, V = 0 100 nA GSF DS GateBody Leakage Current, Reverse NTE491 I V = 15V, V = 0 10 nA GSSR GSF DS NTE491SM V = 20V, V = 0 100 nA GSF DS ON Characteristics (Note 1) Gate Threshold Voltage NTE491 V I = 1mA, V = V 0.8 3.0 V GS(Th) D DS GS NTE491SM I = 250 A, V = V 1.0 2.1 2.5 V D DS GS Static DrainSource ON Resistance NTE491 r V = 10V, 1.2 5.0 DS(on) GS I = 500mA D T = +125 C 1.9 9.0 J V = 4.5V, I = 75mA 1.8 5.3 GS D NTE491SM V = 10V, 1.2 7.5 GS I = 500mA D T = +100 C 1.7 13.5 J DrainSource ONVoltage NTE491 V V = 10V, I = 500mA 0.6 2.5 V DS(on) GS D V = 4.5V, I = 75mA 0.14 0.45 V GS D NTE491SM V = 10V, I = 500mA 0.6 3.75 V GS D V = 4.5V, I = 75mA 0.9 1.5 V GS D ONState Drain Current NTE491 I V = 4.5V, V = 10V 75 600 mA d(on) GS DS NTE491SM V = 10V, V 2 V 500 2700 mA GS DS DS(on) Forward Transconductance NTE491 g V = 10V, I = 200mA 100 320 mhos fs DS D NTE491SM V 2 V , I = 200mA 80 320 mhos DS DS(on) D Dynamic Characteristics Input Capacitance C V = 25V, V = 0, f = 1MHz 20 50 pF iss DS GS Reverse Transfer Capacitance C 11 25 pF oss Output Capacitance C 4 5 pF rss Note 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.