X-On Electronics has gained recognition as a prominent supplier of NTE67 MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTE67 MOSFETs are a product manufactured by NTE. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTE67 NTE

NTE67 electronic component of NTE
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See Product Specifications
Part No.NTE67
Manufacturer: NTE
Category: MOSFETs
Description: Transistor: N-MOSFET; 400V; 5.5A; TO220
Datasheet: NTE67 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3: USD 10.5588 ea
Line Total: USD 31.68 
Availability - 0
MOQ: 3  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3
Multiples : 1
3 : USD 10.5588
10 : USD 10.4285
25 : USD 6.948
50 : USD 6.4114
100 : USD 5.9535
250 : USD 5.4171
500 : USD 5.2731

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 10.2855
3 : USD 6.7304
7 : USD 6.3639

   
Manufacturer
Product Category
Mounting
Case
Kind Of Channel
Type Of Transistor
Drain-Source Voltage
Drain Current
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE67 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE67 and other electronic components in the MOSFETs category and beyond.

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NTE67 MOSFET NCh, Enhancement Mode High Speed Switch Description: The NTE67 is a TMOS Power FET in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. Features: D Lower R DS(ON) Improved Inductive Ruggedness Fast Switching Times Lower Input Capacitance Extended Safe Operating Area G Improved High Temperature Reliability S Absolute Maximum Ratings: DrainSource Voltage (T = +25 C to +150 C), V .................................. 400V J DSS DrainGate Voltage (R = 1M , T = +25 C to +125 C), V ......................... 400V GS J DGR GateSource Voltage, V ......................................................... 20V GS Continuous Drain Current, I D T = +25 C ................................................................. 4.5A C T = +100 C ................................................................ 3.0A C Pulsed Drain Current (Note 2), I ................................................... 18A DM Pulsed Gate Current, I .......................................................... 1.5A GM Single Pulsed Avalanche Energy (Note 3), E ...................................... 290mJ AS Avalanche Current, I ............................................................. 5.5A AS Total Power Dissipation (T = +25 C), P ............................................ 75W C D Derate Above 25 C ....................................................... 0.6W/ C Operating Junction Temperature Range, T .................................. 55 to +150 C J Storage Temperature Range, T .......................................... 55 to +150 C stg Lead Temperature (During Soldering, 1/8 from case, 5sec max.), T ................... +300 C L Thermal Resistance, Junction toCase, R ..................................... 1.67K/W thJC Thermal Resistance, Junction toAmbient, R .................................... 80K/W thJA Thermal Resistance, Case toSink (Mounting surface flat, smooth, and greased), R 0.24K/W thCS Note 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. Note 2. Repetitive rating: Pulse width limited by max, junction temperature. Note 3. L = 17mH, V = 50V, R = 25 , Starting T = +25 C. dd G J Rev. 1013Electrical Characteristics: (T = +25 C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit DrainSource Breakdown Voltage BV V = 0V, I = 250 A 400 V DSS GS D Gate Threshold Voltage V V = V , I = 250 A 2.0 4.0 V GS(th) DS GS D GateSource Leakage, Forward I V = 20V 100 nA GSS GS GateSource Leakage, Reverse I V = 20V 100 nA GSS GS Zero Gate Voltage Drain Current I V = Max. Rating, V = 0V 250 A DSS DS GS V = Max. Rating x 0.8, V = 0V, 1000 A DS GS T = +125 C C OnState DrainSource Current I V > I x R max, V = 10V, Note 1 4.5 A D(on) DS D(on) DS(on) GS Static DrainSource OnState R V = 10V, I = 3A, Note 1 1.0 1.5 DS(on) GS D Resistance Forward Transconductance g V 50V, I = 3A, Note 1 2.9 4.4 mhos fs DS D Input Capacitance C V = 0V, V = 25V, f = 1MHz 780 pF iss GS DS Output Capacitance C 99 pF oss Reverse Transfer Capacitance C 43 pF rss TurnOn Delay Time t V = 0.5BV , I = 5.5A, Z = 12 11 17 ns d(on) DD DSS D O (MOSFET switching times are essentially Rise Time t 19 29 ns r independent of operating temperature) TurnOff Delay Time t 37 56 ns d(off) Fall Time t 16 24 ns f Total Gate Charge Q V = 10V, I = 5.5A, V = 0.8 Max. Rating 18 30 nC g GS D DS (GateSource Plus GateDrain) (Gate charge is essentially independent of operating temperature) GateSource Charge Q 40 nC gs GateDrain (Miller) Charge Q 14 nC gd Note 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. Source Drain Diode Ratings and Characteristics: Parameter Symbol Test Conditions Min Typ Max Unit Continuous Source Current (Body Diode) I 4.5 A S Pulse Source Current (Body Diode) I Note 2 18 A SM Diode Forward Voltage V T = +25 C, I = 4.5A, V = 0V 1.6 V SD C S GS Reverse Recovery Time t T = +25 C, I = 5.5A, dI /dt = 100A/ s 310 660 ns rr J F F Note 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. Note 2. Repetitive rating: Pulse width limited by max, junction temperature.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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