NTE67 MOSFET NCh, Enhancement Mode High Speed Switch Description: The NTE67 is a TMOS Power FET in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. Features: D Lower R DS(ON) Improved Inductive Ruggedness Fast Switching Times Lower Input Capacitance Extended Safe Operating Area G Improved High Temperature Reliability S Absolute Maximum Ratings: DrainSource Voltage (T = +25 C to +150 C), V .................................. 400V J DSS DrainGate Voltage (R = 1M , T = +25 C to +125 C), V ......................... 400V GS J DGR GateSource Voltage, V ......................................................... 20V GS Continuous Drain Current, I D T = +25 C ................................................................. 4.5A C T = +100 C ................................................................ 3.0A C Pulsed Drain Current (Note 2), I ................................................... 18A DM Pulsed Gate Current, I .......................................................... 1.5A GM Single Pulsed Avalanche Energy (Note 3), E ...................................... 290mJ AS Avalanche Current, I ............................................................. 5.5A AS Total Power Dissipation (T = +25 C), P ............................................ 75W C D Derate Above 25 C ....................................................... 0.6W/ C Operating Junction Temperature Range, T .................................. 55 to +150 C J Storage Temperature Range, T .......................................... 55 to +150 C stg Lead Temperature (During Soldering, 1/8 from case, 5sec max.), T ................... +300 C L Thermal Resistance, Junction toCase, R ..................................... 1.67K/W thJC Thermal Resistance, Junction toAmbient, R .................................... 80K/W thJA Thermal Resistance, Case toSink (Mounting surface flat, smooth, and greased), R 0.24K/W thCS Note 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. Note 2. Repetitive rating: Pulse width limited by max, junction temperature. Note 3. L = 17mH, V = 50V, R = 25 , Starting T = +25 C. dd G J Rev. 1013Electrical Characteristics: (T = +25 C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit DrainSource Breakdown Voltage BV V = 0V, I = 250 A 400 V DSS GS D Gate Threshold Voltage V V = V , I = 250 A 2.0 4.0 V GS(th) DS GS D GateSource Leakage, Forward I V = 20V 100 nA GSS GS GateSource Leakage, Reverse I V = 20V 100 nA GSS GS Zero Gate Voltage Drain Current I V = Max. Rating, V = 0V 250 A DSS DS GS V = Max. Rating x 0.8, V = 0V, 1000 A DS GS T = +125 C C OnState DrainSource Current I V > I x R max, V = 10V, Note 1 4.5 A D(on) DS D(on) DS(on) GS Static DrainSource OnState R V = 10V, I = 3A, Note 1 1.0 1.5 DS(on) GS D Resistance Forward Transconductance g V 50V, I = 3A, Note 1 2.9 4.4 mhos fs DS D Input Capacitance C V = 0V, V = 25V, f = 1MHz 780 pF iss GS DS Output Capacitance C 99 pF oss Reverse Transfer Capacitance C 43 pF rss TurnOn Delay Time t V = 0.5BV , I = 5.5A, Z = 12 11 17 ns d(on) DD DSS D O (MOSFET switching times are essentially Rise Time t 19 29 ns r independent of operating temperature) TurnOff Delay Time t 37 56 ns d(off) Fall Time t 16 24 ns f Total Gate Charge Q V = 10V, I = 5.5A, V = 0.8 Max. Rating 18 30 nC g GS D DS (GateSource Plus GateDrain) (Gate charge is essentially independent of operating temperature) GateSource Charge Q 40 nC gs GateDrain (Miller) Charge Q 14 nC gd Note 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. Source Drain Diode Ratings and Characteristics: Parameter Symbol Test Conditions Min Typ Max Unit Continuous Source Current (Body Diode) I 4.5 A S Pulse Source Current (Body Diode) I Note 2 18 A SM Diode Forward Voltage V T = +25 C, I = 4.5A, V = 0V 1.6 V SD C S GS Reverse Recovery Time t T = +25 C, I = 5.5A, dI /dt = 100A/ s 310 660 ns rr J F F Note 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. Note 2. Repetitive rating: Pulse width limited by max, junction temperature.