NTE2908 MOSFET NChannel, Enhancement Mode High Speed Switch TO220 Type Package Description: The NTE2908 is a Power MOSFET in a TO 220 type package that utilizes advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design provides an extremely efficient and reliable device for use in a wide variety of applications. D Features: Ultra Low ON Resistance Dynamic dv/dt Rating G +175 C Operating Temperature Fast Switching S Fully Avalanche Rated Absolute Maximum Ratings: Continuous Drain Current (V = 10V), I GS D T = +25C ................................................................. 202A C T = +100C ................................................................ 143A C Pulsed Drain Current (Note 2), I .................................................. 808A DM Power Dissipation (T = +25C), P ................................................ 333W C D Derate Linearly Above 25 C ............................................... 2.2W/ C GatetoSource Voltage, V ...................................................... 20V GS Single Pulse Avalanche Energy (Note 3), E ....................................... 620mJ AS Peak Diode Recovery dv/dt (Note 4), dv/dt .......................................... 1.5V/ns Operating Junction Temperature Range, T .................................. 55 to +175C J Storage Temperature Range, T .......................................... 55 to +175C stg Lead Temperature (During Soldering, 1.6mm from case for 10sec), T ................. +300 C L Mounting Torque (6 32 or M3 Screw) .................................... 10 lbf in (1.1N m) Thermal Resistance, Junction toCase, R .................................... 0.45 C/W thJC Thermal Resistance, Junction toAmbient, R ................................... 62 C/W thJA Typical Thermal Resistance, Case toSink (Flat, Greased Surface), R ............ 0.5 C/W thCS Note 1. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. Note 2. Repetitive rating pulse width limited by maximum junction temperature. Note 3. Starting T = +25C, L = 85H, R = 25, I = 121A J G AS Note 4. I 121A, di/dt 130A/s, V V , T +175 C SD DD (BR)DSS J Rev. 615Electrical Characteristics: (T = +25C unless otherwise specified) J Parameter Symbol Test Conditions Min Typ Max Unit DraintoSource Breakdown Voltage V V = 0V, I = 250A 40 V (BR)DSS GS D Breakdown Voltage Temp. Coefficient V Reference to +25 C, I = 1mA 0.039 V/C (BR)DSS D T J Static DraintoSource OnResistance R V = 10V, I = 121A, Note 5 0.0035 0.004 DS(on) GS D Gate Threshold Voltage V V = 10V, I = 250A 2.0 4.0 V GS(th) DS D Forward Transconductance g V = 25V, I = 121A 76 S fs DS D DraintoSource Leakage Current I V = 40V, V = 0V 20 A DSS DS GS V = 32V, V = 0V, T = +150C 250 A DS GS J GatetoSource Forward Leakage I V = 20V 200 nA GSS GS GatetoSource Reverse Leakage I V = 20V 200 nA GSS GS Total Gate Charge Q 131 196 nC I = 121A, V = 32V, V = 10V, g D DS GS Note 5 GatetoSource Charge Q 36 nC gs GatetoDrain (Miller) Charge Q 37 56 nC gd TurnOn Delay Time t 17 ns V = 20V, I = 121A, R = 2.5, d(on) DD D G R = 0.2, Note 5 D Rise Time t 190 ns r TurnOff Delay Time t 46 ns d(off) Fall Time t 33 ns f Internal Drain Inductance L Between lead, .250in. (6.0) mm from 4.5 nH D package and center of die contact Internal Source Inductance L 7.5 nH S Input Capacitance C 5669 pF V = 0V, V = 25V, f = 1MHz iss GS DS Output Capacitance C 1659 pF oss Reverse Transfer Capacitance C 223 pF rss Output Capacitance C V = 0V, V = 1.0V, f = 1MHz 6205 pF oss GS DS V = 0V, V = 32V, f = 1MHz 1467 pF GS DS Effective Output Capacitance C eff. V = 0V, V = 0V to 32V, Note 6 2249 pF oss GS DS SourceDrain Ratings and Characteristics: Parameter Symbol Test Conditions Min Typ Max Unit Continuous Source Current (Body Diode) I Note 1 202 A S Pulsed Source Current (Body Diode) I Note 2 808 A SM Diode Forward Voltage V T = +25C, I = 121A, V = 0V, 1.5 V SD J S GS Note 5 Reverse Recovery Time t T = +25C, I = 121A, 78 117 ns rr J F di/dt = 100A/ s, Note 5 Reverse Recovery Charge Q 163 245 C rr Forward TurnOn Time t Intrinsic turnon time is neglegible (turnon is dominated by L +L ) on S D Note 1. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. Note 2. Repetitive rating pulse width limited by maximum junction temperature. Note 5. Pulse width 00 s duty cycle 2%. Note 6. C eff. is a fixed capacitance that gives the same charging time as C while V is rising oss oss DS from 0 to 80% V . DSS