NTE2911 MOSFET NChannel, Enhancement Mode High Speed Switch TO220 Full Pack Type Package D Features: Low Drain Source ONResistance High Forward Transfer Admittance G Low Leakage Current Enhancement Mode S Absolute Maximum Ratings: (T = +25C, Note 1 unless otherwise specified) A DrainSource Voltage, V ........................................................ 500V DSS DrainGate Voltage (R = 20k), V ............................................. 500V GS DGR GateSource Voltage, V ........................................................ 30V GSS Drain Current (Note 2), I D Continuous .................................................................. 12A Pulse (t = 1ms) .............................................................. 48A Drain Power Dissipation (T = +25C), P ............................................ 40W C D Single Pulse Avalanche Energy (Note 3), E ....................................... 364mJ AS Avalanche Current, I .............................................................. 12A AR Repetitive Avalanche Energy (Note 4), E ............................................ 4mJ AR Channel Temperature T ........................................................ +150 C ch Storage Temperature Range, T .......................................... 55 to +150C stg Thermal Resistance, Channel toCase, R ................................. 3.125 C/W th(chc) Thermal Resistance, Channel toAmbient, R ............................... 62.5 C/W th(cha) Note 1. Using continuously under heavy loads (e.g. the application of high temperature/current/ voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/cur- rent/voltage, etc.) are within the Absolute Maximum Ratings. Note 2. Ensure that the channel temperature does not exceed +150 C. Note 3. V = 90V, T = +25C (Initial), L = 4.3mH, I = 12A, R = 25. DD ch AR G Note 4. Repetitive rating: pulse width limited by maximum channel temperature. Rev. 914Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Gate Leakage Current I V = 25V, V = 0V 10 A GSS GS DS GatetoSource Breakdown Voltage V V = 0V, I = 10A 30 V (BR)GSS DS G Drain CutOff Current I V = 500V, V = 0V 100 A DSS DS GS DraintoSource Breakdown Voltage V V = 0V, I = 10mA 500 V (BR)DSS GS D Gate Threshold Voltage V V = 10V, I = 1mA 2.0 4.0 V GS(th) DS D DraintoSource OnResistance R V = 10V, I = 6A 0.4 0.52 DS(on) GS D Forward Transfer Admittance y V = 10V, I = 6A 3.5 8.5 S fs DS D Input Capacitance C 1500 pF V = 0V, V = 25V, f = 1MHz iss GS DS Output Capacitance C 180 pF oss Reverse Transfer Capacitance C 15 pF rss TurnOn Time t 50 ns V = 200V, I = 6A, R = 33, on DD D L V = 10V, Duty 1%, t = 10s GS w Rise Time t 22 ns r TurnOff Time t 170 ns off Fall Time t 36 ns f Total Gate Charge Q 42 nC I = 12A, V = 400V, V = 10V g D DD GS GatetoSource Charge Q 23 nC gs GatetoDrain (Miller) Charge Q 19 nC gd SourceDrain Ratings and Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Continuous Drain Reverse Current I Note 2 12 A DR Pulse Drain Reverse Current I Note 2 48 A DRP Diode Forward Voltage V I = 12A, V = 0V 1.7 V DSF DR GS Reverse Recovery Time t I = 12A, V = 0V, 1200 ns rr DR GS dI /dt = 100A/s DR Reverse Recovery Charge Q 16 C rr Note 2. Ensure that the channel temperature does not exceed +150 C. D G S