X-On Electronics has gained recognition as a prominent supplier of NTE291 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE291 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE291 NTE

NTE291 electronic component of NTE
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See Product Specifications
Part No.NTE291
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: Transistor: NPN; bipolar; 120V; 4A; 40W; TO220
Datasheet: NTE291 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
25: USD 2.625 ea
Line Total: USD 65.62 
Availability - 58
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ: 25  Multiples: 1
Pack Size: 1
Availability Price Quantity
58
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 25
Multiples : 1
25 : USD 2.625
100 : USD 2.2125
250 : USD 2.075
500 : USD 1.9375
1000 : USD 1.85
2500 : USD 1.8
5000 : USD 1.75
7500 : USD 1.725

26
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 2.814
3 : USD 2.534
8 : USD 2.212
22 : USD 2.086
25 : USD 2.016

   
Manufacturer
Product Category
Polarisation
Mounting
Case
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Power Dissipation
Current Gain
Frequency
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We are delighted to provide the NTE291 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE291 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NTE291 (NPN) & NTE292 (PNP) Silicon Complementary Transistors Medium Power Amp, Switch Description: The NTE291 (NPN) and NTE292 (PNP) are GeneralPurpose MediumPower silicon complementa- ry transistors in a TO220 type package designed for switching and amplifier applications. They are especially designed for series and shunt regulators and as a driver and output stage of highfidelity amplifiers. Features: Low Saturation Voltage Absolute Maximum Ratings: CollectortoBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130V CBO CollectortoEmitter Voltage (R = 100 , V = 0), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130V BB BB CEX CollectortoEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V CEO EmitterToBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EBO Continuous Collector Current (T +106C), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A C C Continuous Base Current (T +130C), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A C B Power Dissipation, P D T = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16W C Derate Linearly Above T = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.32W/C C T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W C Derate Linearly Above T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.32W/C C T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8W A Derate Linearly Above T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.0144W/C A Operating Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C opr Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C stg Lead Temperature (During Soldering), T L At distance 1/8 in. (3.17mm) from case for 10s Max . . . . . . . . . . . . . . . . . . . . . . . . . . +235C Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.125C/W thJC Thermal Resistance, JunctiontoAmbient, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70C/W thJA Note 1. NTE292MCP is a matched complementary pair containing 1 each of NTE291 (NPN) and NTE292 (PNP).Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 60V, I = 0 1 mA CEO CE B Collector Cutoff Current I R = 100 , V = 120V 0.1 mA CER BE CE R = 100 , V = 120V, 2 mA BE CE T = +100C C Collector Cutoff Current I V = 120V, V = 1.5V 0.1 mA CEX CE BE V = 120V, V = 1.5V, 2 mA CE BE T = +100C C Emitter Cutoff Current I V = 5V, I = 0 1 mA EBO BE C CollectortoEmitter Sustaining V I = 0.1A, I = 0, Note 1 120 V CEO(sus) C B Voltage CollectortoEmitter Sustaining V R = 100 , I = 0.1A, Note 2 130 V CER(sus) BE C Voltage DC Forward Current h V = 4V, I = 1.5A, Note 1 15 150 FE CE C V = 2.5V, I = 4A, Note 1 2 CE C BasetoEmitter Voltage V V = 4V, I = 1.5A, Note 1 2 V BE CE C V = 2.5V, I = 4A, Note 1 3.5 V CE C CollectortoEmitter Saturation V I = 1.5A, I = 0.15A, Note 1 1.2 V C B CE(sat) Voltage I = 4A, I = 2A, Note 1 2.5 V C B Small Signal Forward Current h V = 4V, I = 0.5A, f = 50kHz 20 fe CE C Transfer Ratio Gain Bandwidth Product f V = 4V, I = 0.5A 4 MHz T CE C Small Signal Forward Current h V = 4V, I = 0.5A, f = 50kHz 4 fe CE C Transfer Ratio CollectortoBase Capacitance C V = 10V, I = 0, f = 1MHz 250 pF obo CB C Note 1. Pulsed: Pulse Duration = 300 s, Duty Factor = 0.018. Note 2. CAUTION: The sustaining voltage (V ) MUST NOT be measured on a curve tracer. CER(sus) .420 (10.67) Max .110 (2.79) .147 (3.75) .500 (12.7) Dia Max Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Base Emitter .100 (2.54) Collector/Tab

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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