X-On Electronics has gained recognition as a prominent supplier of NTE492 MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTE492 MOSFETs are a product manufactured by NTE. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTE492 NTE

NTE492 electronic component of NTE
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See Product Specifications
Part No.NTE492
Manufacturer: NTE
Category: MOSFETs
Description: Transistor: N-MOSFET; 200V; TO92
Datasheet: NTE492 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
40: USD 3.8925 ea
Line Total: USD 155.7 
Availability - 0
MOQ: 40  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 40
Multiples : 1
40 : USD 3.8925
50 : USD 3.1428
100 : USD 1.1772
200 : USD 1.0908
500 : USD 1.0152

0
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 2.8288
3 : USD 1.7607
14 : USD 1.6811

   
Manufacturer
Product Category
Mounting
Case
Kind Of Channel
Type Of Transistor
Drain-Source Voltage
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE492 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE492 and other electronic components in the MOSFETs category and beyond.

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NTE492 MOSFET NCh, Enhancement Mode High Speed Switch TO92 Type Package Absolute Maximum Ratings: DrainSource Voltage, V ......................................................... 200V DS GateSource Voltage, V ......................................................... 20V GS Drain Current, I D Continuous (Note 1) ....................................................... 250mA Pulsed (Note 2) ........................................................... 500mA Total Device Dissipation (T = +25 C), P ......................................... 350mW A D Derate above 25 C ..................................................... 2.8mW/ C Operating Junction Temperature Range, T .................................. 55 to +150 C J Storage Temperature Range, T .......................................... 55 to +150 C stg Note 1. The Power Dissipation of the package may result in a lower continuous drain current. Note 2. Pulse Width 300 s, Duty Cycle 2%. Electrical Characteristics: (T = +25 C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics ZeroGateVoltage Drain Current I V = 130V, V = 0 30 nA DSS DS GS DrainSource Breakdown Voltage V V = 0, I = 100 A 200 V (BR)DSX GS D Gate Reverse Current I V = 15V, V = 0 0.01 10.0 nA GSS GS DS ON Characteristics (Note 2) Gate Threshold Voltage V I = 1mA, V = V 1.0 3.0 V GS(Th) D DS GS Static DrainSource ON Resistance r V = 10V, I = 100mA 4.5 6.0 DS(on) GS D V = 10V, I = 250mA 4.8 6.4 GS D SmallSignal Characteristics Input Capacitance C V = 25V, V = 0, f = 1MHz 60 pF iss DS GS Reverse Transfer Capacitance C V = 25V, V = 0, f = 1MHz 6.0 pF rss DS GS Output Capacitance C V = 25V, V = 0, f = 1MHz 30 pF oss DS GS Forward Transconductance g V = 25V, I = 250mA 200 400 mmhos fs DS D Note 2. Pulse Width 300 s, Duty Cycle 2%. Rev. 1013Electrical Characteristics (Contd): (T = +25 C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Switching Characteristics TurnOn Time t 6.0 15.0 ns on TurnOff Time t 12 15 ns off D G S .135 (3.45) Min .210 (5.33) Seating Plane Max .500 .021 (0.45) Dia Max (12.7) Min DGS .100 (2.54) .050 (1.27) .156 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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