NTE471 Silicon NPN Transistor RF Power Output P = 100W 30MHz O Description: The NTE471 is a 28V epitaxial silicon NPN planar transistor designed primarily for SSB communica- tions. This device utilizes stateoftheart diffused emitter ballasting for improved ruggedness and reliability. Features: Better than 15dB Gain at 30MHz and 100W (CW/PEP) Diffused Emitter Ballasting Withstands Infinite Mismatch at Operating Conditions Low Inductance Stripline Package Frequency = 30MHz Power Out = 100 Watts Voltage = 28 Volts Power Gain = 15dB Absolute Maximum Ratings: (T = +25C unless otherweise specified) C CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V EBO Maximum Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A C Total Device Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 270W C tot Maximum Junction Temperatures, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C stg Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65C/W thJCElectrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 30V, V = 0 15 mA CES CE BE CollectorEmitter Breakdown Voltage V I = 100mA, I = 0, Note 1 36 V (BR)CEO C B V I = 100mA, V = 0, Note 1 65 V (BR)CES C BE EmitterBase Breakdown Voltage V I = 10mA, I = 0 4 V (BR)EBO E C DC Current Gain h V = 5V, I = 5A 10 50 FE CE C Dynamic Characteristics Power Output P V = 28V, f = 30MHz 100 W O CE Power Gain P V = 28V, f = 30MHz 15.6 16.0 dB g CE Capacitance C V = 30V, I = 0, f = 1MHz 250 pF ob EB E Note 1. Pulsed through a 25mH inductor. .127 (3.17) Dia .725 (18.42) (2 Holes) EC .250 (6.35) BE .225 (5.72) 1.061 (26.95) Ceramic Cap .480 (12.1) Dia .260 (6.6) .065 (1.68) .975 (24.77) .095 (2.42)