NTE47 Silicon NPN Transistor High Gain, Low Noise Amp Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V CEO CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V CBO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.5V EBO Continuous Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA C Total Device Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW A D Derate above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mW/C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3C/W thJC Thermal Resistance, JunctiontoAmbient (Note 1), R . . . . . . . . . . . . . . . . . . . . . . . . . . 200C/W thJA Note 1 R is measured with the device soldered into a typical printed circuit board. thJA Electrical Characteristics: (T = +25C unless otherwise noted) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown Voltage V I = 10mA, I = 0, Note 2 45 V (BR)CEO C B ColletorBase Breakdown Voltage V I = 100 A, I = 0 45 V (BR)CBO C E EmitterBase Breakdown Voltage V I = 10 A, I = 0 6.5 V (BR)EBO E C Collector Cutoff Current I V = 30V, I = 0 1.0 50 nA CBO CB E ON Characteristics (Note 2) DC Current Gain h V = 5V, I = 10 A 400 580 FE CE C V = 5V, I = 100 A 500 850 CE C V = 5V, I = 1mA 500 1100 CE C V = 5V, I = 10mA 500 1150 CE C CollectorEmitter Saturation Voltage V I = 10mA, I = 0.5mA 0.2 V CE(sat) C B I = 50mA, I = 0.5mA 0.08 0.3 V C B BaseEmitter ON Voltage V V = 5V, I = 1mA 0.6 0.7 V BE(on) CE C Note 2 Pulse test: Pulse Width 300 s, Duty Cycle 2.0%Electrical Characteristics: (T = +25C unless otherwise noted) A Parameter Symbol Test Conditions Min Typ Max Unit SmallSignal Characteristics Current GainBandwidth Product f V = 5V, I = 1mA, f = 100MHz 100 160 MHz T CE C Output Capaciatnce C V = 5V, I = 0, f = 1MHz 1.7 3.0 pF obo CB E Noise Figure V = 5V, I = 100 A, R = 10k , 0.5 1.5 dB NF CE C S f = 10Hz to 15.7MHz V = 5V, I = 100 A, R = 1.0k , 4.0 dB CE C S f = 100Hz .135 (3.45) Min .210 (5.33) Max Seating Plane .021 (.445) Dia Max .500 (12.7) Min E B C .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max