NTE460 Silicon PChannel JFET Transistor AF Amp TO72 Type Package Absolute Maximum Ratings: DrainGate Voltage, V ............................................................ 20V DG Reverse Gate Source Voltage, V ................................................. 20V GSR Gate Current, I .................................................................. 10mA G Total Device Dissipation (T = +25 C), P ............................................ 0.3W A D Derate above 25 C ..................................................... 1.7mW/ C Storage Temperature Range, T .......................................... 65 to +200 C stg Electrical Characteristics: (T = +25 C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics GateSource Breakdown Voltage V I = 10 A, V = 0 20 V (BR)GSS G DS Gate Reverse Current I V = 10V, V = 0 10 nA GSS GS DS V = 10V, V = 0, T = +150 C 10 A GS DS A ON Characteristics ZeroGateVoltage Drain Current I V = 10V, V = 0, Note 1 2.0 6.0 mA DSS DS GS GateSource Voltage V V = 15V, I = 10 A 6.0 V GS DG D DrainSource Resistance r I = 100 A, V = 0 800 DS D GS SmallSignal Characteristics Forward Transfer Admittance y V = 10V, I = 2mA, f = 1kHz, Note 1 1500 3000 mhos fs DS D V = 10V, I = 2mA, f = 10MHz, Note 1 1350 mhos DS D Output Admittance y V = 10V, I = 2mA, f = 1kHz 40 mhos os DS D Reverse Transfer Conductance y V = 10V, I = 2mA, f = 1kHz 0.1 mhos rs DS D Input Conductance y V = 10V, I = 2mA, f = 1kHz 0.2 mhos is DS D Inpu Capacitance C V = 10V, V = 1V, f = 1MHz 20 pF iss DS GS Functional Characteristics Noise Figure NF V = 5V, I = 1mA, R = 1M , f = 1kHz 3.0 dB DS D g Note 1. Pulse Test: PulseWidth 630ms, Duty Cycle 10%. Rev. 1013D G S .220 (5.58) Dia .185 (4.7) Dia .190 (4.82) .030 (.762) .500 (12.7) Min .018 (0.45) Dia Gate Source Drain 45 Case .040 (1.02)