X-On Electronics has gained recognition as a prominent supplier of NTE459 MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTE459 MOSFETs are a product manufactured by NTE. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTE459 NTE

NTE459 electronic component of NTE
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See Product Specifications
Part No.NTE459
Manufacturer: NTE
Category: MOSFETs
Description: Trans JFET N-CH 50V 10mA 3-Pin TO-72
Datasheet: NTE459 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2: USD 13.8875 ea
Line Total: USD 27.78 
Availability - 1
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ: 2  Multiples: 1
Pack Size: 1
Availability Price Quantity
1
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 2
Multiples : 1
2 : USD 13.8875
5 : USD 12.625
25 : USD 10.0375
50 : USD 9.8875
100 : USD 9.7375
250 : USD 8.925
500 : USD 8.8
1000 : USD 8.6625

4
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 14.224
2 : USD 10.36
3 : USD 10.346
5 : USD 9.786

   
Manufacturer
Product Category
Mounting
Case
Kind Of Channel
Type Of Transistor
Drain-Source Voltage
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE459 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE459 and other electronic components in the MOSFETs category and beyond.

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NTE459 NChannel Silicon JFET Transistor AF Amplifier/Chopper/Switch TO72 Type Package Absolute Maximum Ratings: (T = +25 C unless otherwise specified) A DrainSource Voltage, V .......................................................... 50V DS DrainGate Voltage, V ............................................................ 50V DG GateSource Voltage, V ......................................................... 50V GS Drain Current, I ................................................................. 10mA D Total Device Dissipation (T = +25 C), P ......................................... 300mW A D Derate Above 25 C ....................................................... 2mW/ C Operating Junction Temperature, T ............................................... +175 C J Storage Temperature Range, T .......................................... 55 to +200 C stg Electrical Characteristics: (T = +25 C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics GateSource Breakdown Voltage V I = 1 A, V = 0 50 V (BR)GSS G DS Gate Reverse Current I V = 30V, V = 0 0.1 nA GSS GS DS V = 30V, V = 0, T = +150 C 100 nA GS DS A GateSource Cutoff Voltage V I = 0.5nA, V = 15V 6 V GS(off) D DS GateSource Voltage V I = 200 A, V = 15V 1 4 V GS D DS ON Characteristics ZeroGateVoltage Drain Current I V = 15V, V = 0, Note 1 2 10 mA DSS DS GS SmallSignal Characteristics Forward Transfer Admittance y V = 15V, V = 0, f = 1kHz, 3000 6500 mho fs DS GS Note 1 V = 15V, V = 0, f = 100MHz 3000 mho DS GS Output Admittance y V = 15V, V = 0, f = 1kHz, 20 mho os DS GS Note 1 Input Capacitance C V = 15V, V = 0, f = 1MHz 6 pF iss DS GS Reverse Transfer Capacitance C V = 15V, V = 0, f = 1MHz 3 pF rss DS GS Note 1. Pulse Test: Pulse Width 100ms, Duty Cycle 10%. Rev. 1013Electrical Characteristics (Contd): (T = +25 C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Functional Characteristics Noise Figure NF V = 15V, V = 0, R = 1M , 5 dB DS GS G f = 10Hz, BW = 5Hz 1/2 Equivalent ShortCircuit Input Noise e V = 15V, V = 0, f = 10Hz, 200 nV/Hz n DS GS Voltage BW = 5Hz .220 (5.58) Dia .185 (4.7) Dia .190 (4.82) .030 (.762) .500 (12.7) D Min G S .018 (0.45) Dia Drain Source Gate 45 Case .040 (1.02)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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