X-On Electronics has gained recognition as a prominent supplier of NTE46 Darlington Transistors across the USA, India, Europe, Australia, and various other global locations. NTE46 Darlington Transistors are a product manufactured by NTE. We provide cost-effective solutions for Darlington Transistors, ensuring timely deliveries around the world.

NTE46 NTE

NTE46 electronic component of NTE
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See Product Specifications
Part No.NTE46
Manufacturer: NTE
Category: Darlington Transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 0.5A; 625mW; TO92
Datasheet: NTE46 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
20: USD 1.9044 ea
Line Total: USD 38.09 
Availability - 0
MOQ: 20  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 20
Multiples : 1
20 : USD 1.9044
25 : USD 1.9646
50 : USD 1.8676
100 : USD 1.848
250 : USD 1.1708
500 : USD 1.112
1000 : USD 1.0556

0
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 1.6457
5 : USD 1.6293
10 : USD 1.6129
25 : USD 1.5968
50 : USD 1.5809
100 : USD 1.5651
500 : USD 1.5495
1000 : USD 1.5339
5000 : USD 1.5185

0
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 1.8778
3 : USD 1.6766
10 : USD 1.4888
12 : USD 1.3815
33 : USD 1.301

   
Manufacturer
Product Category
Polarisation
Case
Mounting
Kind Of Transistor
Kind Of Package
Type Of Transistor
Collector Current
Collector-Emitter Voltage
Power Dissipation
Current Gain
Frequency
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE46 from our Darlington Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE46 and other electronic components in the Darlington Transistors category and beyond.

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NTE46 Silicon NPN Transistor Darlington, General Purpose Amplifier, Preamp, Driver Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V CES CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V CBO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V EBO Continuous Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA C Total Device Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW A D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/C Total Device Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W C D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mW/C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Thermal Resistance, Junction to Case, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3C/W JC Thermal Resistance, Junction to Ambient, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200C/W JA Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown V I = 100 A, V = 0 100 V (BR)CES C BE Voltage CollectorBase Breakdown Voltage V I = 100 A, I = 0 100 V (BR)CBO C E EmitterBase Breakdown Voltage V I = 10 A, I = 0 12 V (BR)EBO E C Collector Cutoff Voltage I V = 80V, I = 0 100 nA CBO CB E I V = 80V, V = 0 500 nA CES CE BE Emitter Cutoff Current I V = 10V, I = 0 100 nA EBO BE CElectrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics (Note 1) DC Current Gain h I = 10mA, V = 5V 10,000 FE C CE I = 100mA, V = 5V 10,000 C CE CollectorEmitter Saturation Voltage V I = 10mA, I = 0.01mA 0.7 1.2 V CE(sat) C B I = 100mA, I = 0.1mA 0.8 1.5 V C B BaseEmitter ON Voltage V I = 100mA, V = 5V 1.4 2.0 V BE(on) C CE SmallSignal Characteristics Current GainBandwidth Product f I = 10mA, V = 5V, 125 200 MHz T C CE f = 100MHz, Note 2 Output Capacitance C V = 10V, I = 0, f = 100kHz 5.0 8.0 pF obo CB E Note 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2% Note 2. f = h f T fe test .135 (3.45) Min .210 (5.33) Max Seating Plane C B .500 .021 (.445) Dia Max (12.7) Min E E B C .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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