X-On Electronics has gained recognition as a prominent supplier of NTE98 Darlington Transistors across the USA, India, Europe, Australia, and various other global locations. NTE98 Darlington Transistors are a product manufactured by NTE. We provide cost-effective solutions for Darlington Transistors, ensuring timely deliveries around the world.

NTE98 NTE

NTE98 electronic component of NTE
NTE98 NTE
NTE98 Darlington Transistors
NTE98  Semiconductors

Images are for reference only
See Product Specifications
Part No. NTE98
Manufacturer: NTE
Category: Darlington Transistors
Description: Transistor: NPN; bipolar; Darlington; 500V; 20A; 175W; TO3
Datasheet: NTE98 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 22.5158 ea
Line Total: USD 22.52 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 07 May to Tue. 13 May
MOQ : 1
Multiples : 1
1 : USD 28.5756
10 : USD 23.2139
25 : USD 22.8508
50 : USD 21.8583
100 : USD 20.6238
250 : USD 20.067
500 : USD 19.5467

0
Ship by Wed. 07 May to Tue. 13 May
MOQ : 1
Multiples : 1
1 : USD 23.6921
5 : USD 22.7195
10 : USD 22.6243
25 : USD 20.7934

0
Ship by Mon. 05 May to Wed. 07 May
MOQ : 1
Multiples : 1
1 : USD 22.5158
3 : USD 21.2822

   
Manufacturer
Product Category
Polarisation
Case
Mounting
Kind Of Transistor
Kind Of Package
Type Of Transistor
Collector Current
Collector-Emitter Voltage
Power Dissipation
Current Gain
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE98 from our Darlington Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE98 and other electronic components in the Darlington Transistors category and beyond.

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NTE98 Silicon NPN Transistor HV Darlington Power Amp, Switch Description: The NTE98 is a silicon NPN Darlington transistor in a TO3 type package designed for high voltage, highspeed, power switching in inductive circuits where falltime is critical. They are particularly suited for line operated switchmode applications. Applications: Switching Regulators Inverters Solenoid and Relay Drivers Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V CEO(sus) CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V CEX(sus) CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V CEV EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V EB Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A Base Current, I B Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0A Total Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175W C D Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/C Total Power Dissipation (T = +100C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W C D Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C stg Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0C/W thJC Lead Temperature (During Soldering, 1/8 from case, 5sec), T . . . . . . . . . . . . . . . . . . . . . . . +275C L Note 1. Pulse test: Pulse Width = 5ms, Duty Cycle 10%.Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics (Note 2) CollectorEmitter Sustaining Voltage V I = 100mA, I = 0, V = 500V 500 V CEO(sus) C B clamp V I = 2A, V = 500V, T = +100C 500 V CEX(sus) C clamp C I = 5A, V = 500V, T = +100C 375 V C clamp C Collector Cutoff Current I V = 700V, V = 1.5V 0.25 mA CEV CEV BE(off) V = 700V, V = 1.5V, T = +150C 5.0 mA CEV BE(off) C I V = 700V, R = 50 , T = +100C 5.0 mA CER CE BE C Emitter Cutoff Current I V = 2V, I = 0 175 mA EBO EB C ON Characteristics (Note 3) DC Current Gain h V = 5V, I = 5A 40 400 FE CE C V = 5V, I = 10A 30 300 CE C CollectorEmitter Saturation Voltage V I = 10A, I = 500mA 2.0 V CE(sat) C B I = 10A, I = 500mA, T = +100C 2.5 V C B C I = 20A, I = 2A 3.5 V C B BaseEmitter Saturation Voltage V I = 10A, I = 500mA 2.5 V BE(sat) C B I = 10A, I = 500mA, T = +100C 2.5 V C B C Diode Forward Voltage V I = 5A, Note 3 3 5 V F F Dynamic Characteristics SmallSignal Current Gain h V = 10V, I = 1A, f = 1MHz 8 fe CE C test Output Capacitance C V = 50V, I = 0, f = 100kHz 100 325 pF ob CB E test Switching Characteristics (Resistive Load) Delay Time t 0.12 0.25 s V = 250V, I = 10A, I = 500mA, d CC C B1 V = 5V, t = 50 s, Duty Cycle 2% BE(off) p Rise Time t 0.5 1.5 s r Storage Time t 0.8 2.0 s s Fall Time t 0.2 0.6 s f Switching Characteristics (Inductive Load, Clamped) Storage Time t I = 10A Peak, V = 250V, 1.5 3.5 s sv C clamp I = 500mA, V = 5V, T = +100C B1 BE(off) C Crossover Time t 0.36 1.6 s c Storage Time t 0.8 s I = 10A Peak, V = 250V, sv C clamp I = 500mA, V = 5V, T = +25C B1 BE(off) C Crossover Time t 0.18 s c Note 2. Pulse test: Pulse Width = 300 s, Duty Cycle 2%. Note 3. The internal CollectorEmitter diode can eliminate the need for an external diode to clamp inductive loads. Tests have shown that the Forward Recovery Voltage (V ) of this diode is F comparable to that of typical fast recovery rectifiers.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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