NTE328 Silicon NPN Transistor Power Amp, Switch Description: The NTE328 i a silicon NPN transistor in a TO3 type package designed for use in industrial power amplifier and switching circuit applications. Features: High CollectorEmitter Sustaining Voltage High DC Current Gain Low CollectorEmitter Saturation Voltage Fast Switching Times Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V CEO CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140V CB EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V EB Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A B Total Device Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200W C D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.14W/C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C stg Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.875C/W thJC Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Sustaining Voltage V I = 50mA, I = 0, Note 1 120 V CEO(sus) C B Collector Cutoff Current I V = 120V, V = 1.5V 10 mA CEX CE BE(off) V = 120V, V = 1.5V, T = +150C 1.0 mA CE BE(off) C I V = 60V, I = 0 50 A CEO CE B I V = 180V, I = 0 10 A CBO CB E Emitter Cutoff Current I V = 6V, I = 0 100 A EBO BE C Note 1. Pulse test: Pulse Width 300 s, Duty Cycle 2%.Electrical Characteristics (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics (Note 1) DC Current Gain h V = 2V, I = 0.5A 50 FE CE C V = 2V, I = 10A 30 120 CE C V = 2V, I = 25A 12 CE C CollectorEmitter Saturation Voltage V I = 10A, I = 1.0A 1.0 V CE(sat) C B I = 25A, I = 2.5A 1.8 V C B BaseEmitter Saturation Voltage V I = 10A, I = 1.0A 1.8 V BE(sat) C B I = 25A, I = 2.5A 2.5 V C B BaseEmitter ON Voltage V V = 2V, I = 10A 1.8 V BE(on) CE C Dymanic Characteristics Current GainBandwidth Product f V = 10V, I = 1A, f = 10MHz, Note 2 40 MHz T CE C Output Capacitance C V = 10V, I = 0, f = 0.1MHz 300 pF ob CB E Switching Characteristics Rise Time t V = 80V, I = 10A, I = 1A, V = 6v 0.3 s r CC C B1 BE(off) Storage Time t V = 80V, I = 10A, I = I = 1A 1.0 s s CC C B1 B2 Fall Time t 0.25 s f Note 1. Pulse test: Pulse Width 300 s, Duty Cycle 2%. Note 2. f = h f . T fe test .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min .040 (1.02) Emitter 1.187 (30.16) .215 (5.45) .665 (16.9) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max .525 (13.35) R Max Base Collector/Case