NTE3311 Insulated Gate Bipolar Transistor NChannel Enhancement Mode, High Speed Switch TO3P Type Package Features: High Input Impedance High Speed Low Saturation Voltage Enhancement Mode Applications: High Power Switching Motor Control Absolute Maximum Ratings: (T = +25 C unless otherwise specified) A CollectorEmitter Voltage, V ..................................................... 600V CES GateEmitter Voltage, V ........................................................ 20V GES Collector Current, I C DC ......................................................................... 25A Pulse (1ms) ................................................................. 50A Collector Power Dissipation (T = +25 C), P ........................................ 150W C C Operating Junction Temperature, T .............................................. +150 C J Storage Temperature Range, T ......................................... 55 to +150 C stg Electrical Characteristics: (T = +25 C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Gate Leakage Current I nA V = 20V, V = 0 500 GES GE CE Collector Cutoff Current I V = 600V, V = 0 1.0 mA CES CE GE CollectorEmitter Breakdown Voltage V I = 2mA, V = 0 600 V (BR)CES C GE GateEmitter Cutoff Voltage V I = 25mA, V = 5V 3.0 6.0 V GE(off) C CE CollectorEmitter Saturation Voltage V I = 25A, V = 15V 3.0 4.0 V CE(sat) C GE Input Capacitance C V = 10V, V = 0, f = 1MHz 1400 pF ies CE GE Rise Time t V = 300V 0.30 0.60 s r CC TurnOn Time t 0.40 0.80 s on Fall Time t 0.15 0.35 s f TurnOff Time t 0.50 1.00 s off Rev. 814C G E .190 (4.82) .615 (15.62) .787 (20.0) .591 .126 (3.22) Dia (15.02) .787 (20.0) GC/ E Case .215 (5.47)