NTE331 (NPN) & NTE332 (PNP) Silicon Complementary Transistors Audio Power Amp, Switch Description: The NTE331 (NPN) and NTE332 (PNP) are silicon epitaxialbase complementary power transistors in a TO220 plastic package intended for use in power linear and switching applications. Absolute Maximum Ratings: CollectorBase Voltage (I = 0), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V E CBO CollectorEmitter Voltage (I = 0), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V B CEO EmitterBase Voltage (I = 0), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V C EBO Emitter Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A E Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A C Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A B Total Power Dissipation (T +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90W C D Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C stg Thermal Resistance JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.4C/W Max thJC Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I I = 0, V = 100V 500 A CBO E CB I = 0, V = 100V, T = +150C 5 mA E CB C Collector Cutoff Current I I = 0, V = 50V 1 mA CEO B CE Emitter Cutoff Current I I = 0, V = 5V 1 mA EBO C EB CollectorEmitter Sustaining V I = 0, I = 100mA, Note 1 100 V CEO(sus) B C Voltage CollectorEmitter Saturation V I = 5A, I = 0.5A, Note 1 1 V CE(sat) C B Voltage I = 10A, I = 2.5A, Note 1 3 V C BElectrical Characteristics (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit BaseEmitter Saturation Voltage V I = 10A, I = 2.5A, Note 1 2.5 V BE(sat) C B BaseEmitter Voltage V I = 5A, V = 4V, Note 1 1.5 V BE C CE DC Current Gain h I = 0.5A, V = 4V, Note 1 40 250 FE C CE I = 5A, V = 4V, Note 1 15 150 C CE I = 10A, V = 4V, Note 1 5 C CE Transistion Frequency f I = 0.5A, V = 4V 3 MHz T C CE Note 1. Pulsed Pulse Duration = 300 s, Duty Cycle = 1.5%. .420 (10.67) Max .110 (2.79) .147 (3.75) .500 Dia Max (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Base Emitter .100 (2.54) Collector/Tab