X-On Electronics has gained recognition as a prominent supplier of NTE333 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE333 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE333 NTE

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Part No.	NTE333
Manufacturer:	NTE
Category:	Bipolar Transistors - BJT
Description:	Transistor: NPN; bipolar; RF; 18V; 15A; 175W; W52K; Pout:60W
Datasheet:	NTE333 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 139.7445 ea
Line Total: USD 139.74

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

NTE333 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Mon. 30 Dec to Fri. 03 Jan MOQ : 1 Multiples : 1	1 : USD 139.7445 10 : USD 113.8469 25 : USD 106.2655 50 : USD 99.6252

0 Ship by Thu. 26 Dec to Mon. 30 Dec MOQ : 1 Multiples : 1	1 : USD 147.5186

Specifications

Manufacturer NTE NTE
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT
Kind Of Transistor Rf Rf
Mounting Screw Screw
Case W52k W52k
Polarisation Bipolar Bipolar
Type Of Transistor Npn Npn
Output Power 60 W 60 W
Collector-Emitter Voltage 18 V 18 V
Collector Current 15 A 15 A
Power Dissipation 175 W 175 W
Frequency 14 To 30 MHz 14 To 30 MHz
Current Gain 10 To 150 10 To 150

We are delighted to provide the NTE333 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE333 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

NTE333 & NTE334 Silicon NPN Transistors RF Power Output Description: The NTE333 & NTE334 are designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30MHz. Features: Specified 12.5 Volt, 30MHz Characteristics Output Power = 60 Watts Minimum Gain = 13dB Efficiency = 55% Absolute Maximum Ratings: Collector Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V CEO Collector Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V CES EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V EBO Collector Current Continuous, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A C Total Device Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175W C D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/C Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C stg Thermal Resistance, Junction toCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0C/W thJC Note 1. NTE334 is a discontinued device and no longer available. Electrical Characteristics: (T = +25C unless otherwise specified). C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown Voltage V I = 100mA, I = 0 18 V (BR)CEO C B CollectorEmitter Breakdown Voltage V I = 50mA, V = 0 36 V (BR)CES C BE EmitterBase Breakdown Voltage V I = 10mA, I = 0 4.0 V (BR)EBO E C ON Characteristics DC Current Gain h I = 5.0A, V = 5.0V 10 150 FE C CE Dynamic Characteristics Output Capacitance C V = 12.5Vdc, I = 0, f = 1.0MHz 250 pF ob CB E CommonEmitter Amplifier Power Gain G V = 12.5Vdc, P = 60W, f = 30MHz 13 dB pe CC out Collector Efficiency V = 12.5Vdc, P = 60W, f = 30MHz 55 % CC out Series Equivalent Input Impedance Z V = 12.5Vdc, P = 60W, f = 30MHz 1.6 Ohms in CC out j.844 Series Equivalent Output Impedance Z V = 12.5Vdc, P = 60W, f = 30MHz 1.7 Ohms out CC out j.188Electrical Characteristics (Contd): (T = +25C unless otherwise specified). C Parameter Symbol Test Conditions Min Typ Max Unit Dynamic Characteristics (Contd) Parallel Equivalent Input Impedance Z V = 12.5Vdc, P = 60W, f = 30MHz 2.09/ /pF in CC out 1030 Parallel Equivalent Output Impedance Z V = 12.5Vdc, P = 60W, f = 30MHz 1.75/ /pF out CC out 330 NTE333 .122 (3.1) .725 (18.42) Dia (2 Holes) EC .250 (6.35) BE .225 (5.72) .860 (21.84) .378 (9.56) .005 (0.15) .255 (6.5) .185 (4.7) .975 (24.77) .085 (2.14) NTE334 1.040 (26.4) Max .520 (13.2) C .230 (5.84) EE B .385 (9.8) .100 (2.54) .005 (0.15) Dia .168 (4.27) .750 (19.05) 8 32 NC 3A Wrench Flat

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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