NTE335 & NTE336 Silicon NPN Transistor RF Power Output Description: The NTE335 and NTE336 are silicon NPN RF power transistors designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30MHz. Features: Specified 12.5V, 30MHz Characteristics: Output Power = 80W Minimum Gain = 12dB Efficiency = 50% Available in Two Different Package Designs: NTE335 (W52N, Flange Mount) NTE336 (T93D, Stud Mount) Absolute Maximum Ratings: Collector Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V CEO Collector Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V CBO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V EBO Continuous Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A C Total Device Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250W C D Derate above 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.43W/ C Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C stg Thermal Resistance, Junction toCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.7 C/W thJC Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector Emitter Breakdown Voltage V I = 100mA, I = 0 18 V (BR)CEO C B V I = 50mA, V = 0 36 V (BR)CES C BE Emitter Base Breakdown Voltage V I = 10mA, I = 0 4 V (BR)EBO E CElectrical Characteristics (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics DC Current Gain h I = 5A, V = 5V 10 150 FE C CE Dynamic Characteristics Output Capacitance C V = 15V, I = 0, 250 pF ob CB E f = 1MHz Functional Tests CommonEmitter Amplifier Power Gain G 12 dB V = 12.5V, pe CC PP = 80W80W, OUT Collector Efficiency 50 % f = 30MHzf = 30MHz Series Equivalent Input Impedance Z .938 j.341 in Series Equivalent Output Impedance Z 1.16 j.201 out Parallel Equivalent Input Impedance 1.06 1817pF Parallel Equivalent Output Impedance 1.19 777pF NTE335 NTE336 1.040 (26.4) Max .520 (13.2) .725 (18.42) .127 (3.17) Dia C (2 Holes) EC .250 (6.35) .230 EE (5.84) BE .225 (5.72) 1.061 (25.95) B .385 Ceramic Cap (9.8) .100 (2.54) .480 (12.1) Dia .005 (0.15) Dia .260 (6.6) .750 .168 (4.27) (19.05) .065 .975 (24.77) .095 (2.42) 8 32 NC 3A (1.68) Wrench Flat