IGBT - Field Stop, Trench 650 V, 75 A Product Preview FGH75T65SHDTLN4 Using the novel field stop 3rd generation IGBT technology, FGH75T65SHDTLN4 offers the optimum performance for solar www.onsemi.com inverter, UPS, welder, telecom, ESS and PFC applications where low conduction loss and switching loss are essential. Features 75 A, 650 V Maximum Junction Temperature: T = 175C J V = 1.6 V CE(sat) Positive Temperature Coefficient for Easy Parallel Operating E = 1.06 mJ on High Current Capability Low Saturation Voltage: V = 1.6 V (Typ.) I = 75 A CE(Sat) C C 100% of the Parts Tested for I (1) LM High Input Impedance Fast Switching G Tight Parameter Distribution Pb Free and RoHS Compliant Not Recommended for Reflow and Full PKG Dipping E1 E2 Typical Applications Solar Inverter UPS Welder Telecom ESS PFC MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit CollectortoEmitter Voltage V 650 V CES GatetoEmitter Voltage V 20 V GES TO247 Transient GatetoEmitter Voltage 30 THIN LEADS Collector Current T = 25C I 150 A CASE 340CW C C T = 100C 75 C Pulsed Collector Current (Note 1) I 300 A DEVICE MARKING INFORMATION LM Pulsed Collector Maximum Current (Note 2) I 300 A CM Diode Forward Current T = 25C I 125 A F C T = 100C 75 C Line 1: Date Code Pulsed Diode Maximum Forward Current (Note 2) I 300 A FM Line 2: Device Marking Maximum Power Dissipation T = 25C P 455 W C D Line 3: Device Marking T = 100C 227 C Operating Junction and Storage Temperature T , T 55 to C J STG Range +175 Maximum Lead Temperature for Soldering T 300 C L Purposes (1/8 from case for 5 seconds) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION 1. V = 400 V, V = 15 V, I = 300 A, R = 73 , Inductive Load CC GE C G 2. Repetitive rating: pulse width limited by max. Junction temperature Device Package Shipping This document contains information on a product under development. ON Semiconductor FGH75T65SHDTLN4 TO247 30 Units / Tube reserves the right to change or discontinue this product without notice. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: November, 2019 Rev. P2 FGH75T65SHDTLN4/DFGH75T65SHDTLN4 Table 1. THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, Junction to Case, for IGBT 0.33 C/W JC R Thermal Resistance, Junction to Case, for Diode 0.65 C/W JC R Thermal Resistance, Junction to Ambient 40 C/W JA Table 2. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Collectoremitter breakdown voltage, BV V = 0 V, I = 1 mA 650 V CES GE C gateemitter shortcircuited Temperature Coefficient of Breakdown BV / V = 0 V, I = 1 mA 0.65 V/C CES GE C Voltage T J Collectoremitter cutoff current, I V = 0 V, V = 650 V 250 A CES GE CE gateemitter shortcircuited Gate leakage current, collectoremitter I V = 20 V, V = 0 V 400 nA GES GE CE shortcircuited ON CHARACTERISTICS Gateemitter threshold voltage V V = V , I = 75 mA 4.0 5.5 7.5 V GE(th) GE CE C Collectoremitter saturation voltage V V = 15 V, I = 75 A, 1.6 2.1 mV/C CE(sat) GE C V = 15 V, I = 75 A, T = 175C 2.28 GE C J DYNAMIC CHARACTERISTICS Input Capacitance C V = 30 V, V = 0 V, f = 1 MHz 3710 pF ies CE GE Output Capacitance C 183 oes Reverse Transfer Capacitance C 43 res Gate Charge Total Q V = 400 V, I = 75 A, V = 15 V 126 nC g CE C GE GatetoEmitter Charge Q 24.1 ge GatetoCollector Charge Q 47.6 gc SWITCHING CHARACTERISTICS, INDUCTIVE LOAD T = 25C ns TurnOn Delay Time t 55 d(on) C V = 400 V, I = 75 A CC C Rise Time t 50 r Rg = 15 V = 15 V GE TurnOff Delay Time t 189 d(off) Inductive Load, T = 25C C Fall Time t 39 f TurnOn Switching Loss E 1.06 mJ on TurnOff Switching Loss E 1.56 off Total Switching Loss E 2.62 ts TurnOn Delay Time t V = 400 V, I = 75 A 48 ns d(on) CC C Rg = 15 Rise Time t 56 r V = 15 V GE Inductive Load, T = 175C C TurnOff Delay Time t 205 d(off) Fall Time t 40 f TurnOn Switching Loss E 2.34 mJ on TurnOff Switching Loss E 1.81 off Total Switching Loss E 4.15 ts DIODE CHARACTERISTICS Forward voltage V I = 75 A 1.8 2.1 V F F I = 75 A, T = 175C 1.7 F J www.onsemi.com 2