X-On Electronics has gained recognition as a prominent supplier of STGWA40IH65DF IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. STGWA40IH65DF IGBT Transistors are a product manufactured by STMicroelectronics. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

STGWA40IH65DF STMicroelectronics

Name: STGWA40IH65DF
Brand: STMicroelectronics
SKU: STGWA40IH65DF_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

STGWA40IH65DF electronic component of STMicroelectronics

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Part No.	STGWA40IH65DF
Manufacturer:	STMicroelectronics
Category:	IGBT Transistors
Description:	IGBT Transistors Trench gate field-stop 650 V, 40 A, soft-switching IH series IGBT in a TO-247 long leads package
Datasheet:	STGWA40IH65DF Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 8.0782 ea
Line Total: USD 8.08

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

STGWA40IH65DF More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Wed. 16 Apr to Fri. 18 Apr MOQ : 1 Multiples : 1	1 : USD 8.0782 10 : USD 2.9071 25 : USD 2.7502 100 : USD 2.3842 600 : USD 2.0287 1200 : USD 1.8404

We are delighted to provide the STGWA40IH65DF from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STGWA40IH65DF and other electronic components in the IGBT Transistors category and beyond.

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Additional Infomation About Product

STGWA40IH65DF Datasheet Trench gate field-stop 650 V, 40 A, soft-switching IH series IGBT in a TO247 long leads package Features Designed for soft commutation only Maximum junction temperature: T = 175 C J V = 1.5 V (typ.) I = 40 A CE(sat) C Minimized tail current Tight parameter distribution Low thermal resistance Low drop voltage freewheeling co-packaged diode C(2, TAB) Positive V temperature coefficient CE(sat) Applications G(1) Induction heating Resonant converters Microwave ovens E(3) NG1E3C2T Description The newest IGBT 650 V soft-switching IH series has been developed using an advanced proprietary trench gate field-stop structure, whose performance is optimized both in conduction and switching losses for soft commutation. A freewheeling diode with a low drop forward voltage is included. The result is a product specifically designed to maximize efficiency for any resonant and soft- Product status link switching applications. STGWA40IH65DF Product summary Order code STGWA40IH65DF Marking G40IH65DF Package TO-247 long leads Packing Tube DS11801 - Rev 3 - September 2018 www.st.com For further information contact your local STMicroelectronics sales office.STGWA40IH65DF Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0 V) 650 V CES GE Continuous collector current at T = 25 C 80 C I A C Continuous collector current at T = 100 C 40 C (1) I Pulsed collector current 120 A CP V Gate-emitter voltage 20 V GE Continuous forward current at T = 25 C 40 C I F Continuous forward current at T = 100 C 20 A C (1) I Pulsed forward current 120 FP P Total power dissipation at T = 25 C 238 W TOT C T Storage temperature range - 55 to 150 STG C T Operating junction temperature range - 55 to 175 J 1. Pulse width limited by maximum junction temperature. Table 2. Thermal data Symbol Parameter Value Unit Thermal resistance junction-case IGBT 0.63 R thJC Thermal resistance junction-case diode 2.08 C/W R Thermal resistance junction-ambient 50 thJA DS11801 - Rev 3 page 2/15

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Manufacturer STMicroelectronics STMicroelectronics
Product Category IGBT Transistors IGBT Transistors
Configuration Single Single
Collector- Emitter Voltage VCEO Max 650 V 650 V
Collector-Emitter Saturation Voltage 1.5 V 1.5 V
Maximum Gate Emitter Voltage 20 V 20 V
Continuous Collector Current at 25 C 80 A 80 A
Gate-Emitter Leakage Current 250 nA 250 nA
Package / Case TO - 247 - 3 TO - 247 - 3
Technology Si Si
Mounting Style Through Hole Through Hole
Technology Si Si
Pd - Power Dissipation 238 W 238 W
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 175 C + 175 C
Series Stgwa40ih65df Stgwa40ih65df
Continuous Collector Current Ic Max 80 A 80 A
Brand Stmicroelectronics Stmicroelectronics
Product Type Igbt Transistors Igbt Transistors
Factory Pack Quantity : 30 30
Subcategory Igbts Igbts