X-On Electronics has gained recognition as a prominent supplier of RGW80TK65DGVC11 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. RGW80TK65DGVC11 IGBT Transistors are a product manufactured by ROHM. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

RGW80TK65DGVC11 ROHM

RGW80TK65DGVC11 electronic component of ROHM
RGW80TK65DGVC11 ROHM
RGW80TK65DGVC11 IGBT Transistors
RGW80TK65DGVC11 Semiconductors

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See Product Specifications
Part No. RGW80TK65DGVC11
Manufacturer: ROHM
Category: IGBT Transistors
Description: IGBT Transistors 650V 40A TO-3PFM Field Stp Trnch IGBT
Datasheet: RGW80TK65DGVC11 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 4.378 ea
Line Total: USD 4.38 
Availability - 247
Ship by Fri. 03 Jan to Tue. 07 Jan
MOQ: 1  Multiples: 1
Pack Size: 1

 RGW80TK65DGVC11 More Buying Options & Price Grid(s)

Availability Price Quantity
247
Ship by Fri. 03 Jan to Tue. 07 Jan
MOQ : 1
Multiples : 1
1 : USD 4.378
10 : USD 3.784
25 : USD 3.586
450 : USD 3.575
5400 : USD 3.564

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Continuous Collector Current Ic Max
Brand
Product Type
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RGW80TK65DGVC11 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RGW80TK65DGVC11 and other electronic components in the IGBT Transistors category and beyond.

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Additional Infomation About Product

RGW80TK65D 650V 40A Field Stop Trench IGBT Datasheet Outline TO-3PFM V 650V CES I 23A C (100) V 1.5V I =40A CE(sat) (Typ.) C P 81W D (1)(2)(3) Features Inner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate 2) High Speed Switching (2) Collector *1 3) Low Switching Loss & Soft Switching (3) Emitter (1) 4) Built in Very Fast & Soft Recovery FRD *1 Built in FRD (3) 5) Pb - free Lead Plating RoHS Compliant Applications Packaging Specifications PFC Packaging Tube UPS Reel Size (mm) - Welding Tape Width (mm) - Type Solar Inverter Basic Ordering Unit (pcs) 450 IH Packing Code C11 RGW80TK65D Marking Absolute Maximum Ratings (at T = 25C unless otherwise specified) C Parameter Symbol Value Unit V Collector - Emitter Voltage 650 V CES V Gate - Emitter Voltage 30 V GES T = 25C I 39 A C C Collector Current T = 100C I 23 A C C *1 Pulsed Collector Current 160 A I CP T = 25C I 27 A C F Diode Forward Current T = 100C I 16 A C F *1 Diode Pulsed Forward Current 160 A I FP T = 25C P 81 W C D Power Dissipation T = 100C P 40 W C D Operating Junction Temperature T C 40 to +175 j T Storage Temperature 55 to +175 C stg *1 Pulse width limited by T . jmax www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 2017.10 - Rev.A 1/11Datasheet RGW80TK65D Thermal Resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal Resistance IGBT Junction - Case -- 1.85 C/W (j-c) R Thermal Resistance Diode Junction - Case -- 2.79 C/W (j-c) IGBT Electrical Characteristics (at T = 25C unless otherwise specified) j Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector - Emitter Breakdown BV I = 10A, V = 0V 650 - -V CES C GE Voltage I V = 650V, V = 0V Collector Cut - off Current -- 10 A CES CE GE I Gate - Emitter Leakage Current V = 30V, V = 0V -- 200 nA GES GE CE Gate - Emitter Threshold V V = 5V, I = 26.0mA 5.0 6.0 7.0 V GE(th) CE C Voltage I = 40A, V = 15V C GE Collector - Emitter Saturation V T = 25C - 1.5 1.9 V CE(sat) j Voltage T = 175C - 1.85 - j www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 2017.10 - Rev.A 2/11

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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