X-On Electronics has gained recognition as a prominent supplier of RGW80TS65DGC11 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. RGW80TS65DGC11 IGBT Transistors are a product manufactured by ROHM. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

RGW80TS65DGC11 ROHM

Name: RGW80TS65DGC11
Brand: ROHM
SKU: RGW80TS65DGC11_ROHM
Availability: OutOfStock
Rating: 5 (11 reviews)

RGW80TS65DGC11 electronic component of ROHM

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Part No.	RGW80TS65DGC11
Manufacturer:	ROHM
Category:	IGBT Transistors
Description:	IGBT Transistors 650V 40A TO-247N Field Stp Trnch IGBT
Datasheet:	RGW80TS65DGC11 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 7.3012 ea
Line Total: USD 7.3

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

RGW80TS65DGC11 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Tue. 19 Nov to Thu. 21 Nov MOQ : 1 Multiples : 1	1 : USD 7.3012 10 : USD 6.0819 25 : USD 5.8154 100 : USD 4.9198

0 Ship by Tue. 19 Nov to Thu. 21 Nov MOQ : 1 Multiples : 1	1 : USD 6.961 4 : USD 4.6407 10 : USD 4.3965

We are delighted to provide the RGW80TS65DGC11 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RGW80TS65DGC11 and other electronic components in the IGBT Transistors category and beyond.

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Additional Infomation About Product

RGW80TS65D 650V 40A Field Stop Trench IGBT Datasheet Outline TO-247N V 650V CES I 40A C (100) V 1.5V CE(sat) (Typ.) P 214W (1)(2)(3) D Features Inner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate 2) High Speed Switching (2) Collector *1 3) Low Switching Loss & Soft Switching (3) Emitter (1) 4) Built in Very Fast & Soft Recovery FRD *1 Built in FRD (3) 5) Pb - free Lead Plating RoHS Compliant Applications Packaging Specifications PFC Packaging Tube UPS Reel Size (mm) - Welding Tape Width (mm) - Type Solar Inverter Basic Ordering Unit (pcs) 450 IH Packing Code C11 RGW80TS65D Marking Absolute Maximum Ratings (at T = 25C unless otherwise specified) C Parameter Symbol Value Unit V Collector - Emitter Voltage 650 V CES V Gate - Emitter Voltage 30 V GES T = 25C I 78 A C C Collector Current T = 100C I 40 A C C *1 Pulsed Collector Current 160 A I CP T = 25C I 40 A C F Diode Forward Current T = 100C I 20 A C F *1 Diode Pulsed Forward Current 160 A I FP T = 25C P 214 W C D Power Dissipation T = 100C P 107 W C D Operating Junction Temperature T C 40 to +175 j T Storage Temperature 55 to +175 C stg *1 Pulse width limited by T . jmax www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 2017.11 - Rev.A 1/11Datasheet RGW80TS65D Thermal Resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal Resistance IGBT Junction - Case -- 0.70 C/W (j-c) R Thermal Resistance Diode Junction - Case -- 1.62 C/W (j-c) IGBT Electrical Characteristics (at T = 25C unless otherwise specified) j Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector - Emitter Breakdown BV I = 10A, V = 0V 650 - -V CES C GE Voltage I V = 650V, V = 0V Collector Cut - off Current -- 10 A CES CE GE I Gate - Emitter Leakage Current V = 30V, V = 0V -- 200 nA GES GE CE Gate - Emitter Threshold V V = 5V, I = 26.0mA 5.0 6.0 7.0 V GE(th) CE C Voltage I = 40A, V = 15V C GE Collector - Emitter Saturation V T = 25C - 1.5 1.9 V CE(sat) j Voltage T = 175C - 1.85 - j www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 2017.11 - Rev.A 2/11

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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