X-On Electronics has gained recognition as a prominent supplier of RHU002N06FRAT106 MOSFETs across the USA, India, Europe, Australia, and various other global locations. RHU002N06FRAT106 MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RHU002N06FRAT106 ROHM

RHU002N06FRAT106 electronic component of ROHM
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Part No.RHU002N06FRAT106
Manufacturer: ROHM
Category: MOSFETs
Description: N-Channel 60 V 200mA (Ta) 200mW (Ta) Surface Mount UMT3
Datasheet: RHU002N06FRAT106 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3904 ea
Line Total: USD 0.39 
Availability - 1594
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1594
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 0.3904
10 : USD 0.2414
100 : USD 0.1201
1000 : USD 0.0994
3000 : USD 0.0808
9000 : USD 0.0739
24000 : USD 0.0728
45000 : USD 0.0705

2497
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 266
Multiples : 1
266 : USD 0.1608
500 : USD 0.1601
1000 : USD 0.1304
2000 : USD 0.1221

   
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Automotive Qualification Standard
Msl
Svhc
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We are delighted to provide the RHU002N06FRAT106 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RHU002N06FRAT106 and other electronic components in the MOSFETs category and beyond.

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RHU002N06FRA Datasheet Nch 60V 200mA Small Signal MOSFET llOutline SOT-323 V 60V DSS SC-70 R (Max.) 2.4 DS(on) UMT3 I 200mA D P 200mW D llFeatures llInner circuit 1) Very fast switching 2) Pb-free lead plating RoHS compliant. 3) AEC-Q101 Qualified llApplication llPackaging specifications Embossed Switching Packing Tape Reel size (mm) 180 Tape width (mm) 8 Type Basic ordering unit (pcs) 3000 Taping code T106 Marking KP llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 60 V DSS I Continuous drain current 200 mA D *1 I Pulsed drain current 800 mA DP Gate - Source voltage V 20 V GSS *2 P Power dissipation 200 mW D Junction temperature T 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/10 2016 ROHM Co., Ltd. All rights reserved. 20160905 - Rev.001 RHU002N06FRA Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R Thermal resistance, junction - ambient - - 625 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 60 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 66.1 - mV/ temperature coefficient T referenced to 25 j V = 60V, V = 0V DS GS - - 1 A Ta=25C Zero gate voltage I DSS drain current V = 60V, V = 0V DS GS - - 200 A Ta=125C I Gate - Source leakage current V = 20V, V = 0V - - 10 A GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 1.0 - 2.5 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -3.0 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 200mA - 1.7 2.4 GS D Static drain - source *3 R DS(on) on - state resistance V = 4V, I = 200mA - 2.8 4.0 GS D Forward Transfer *3 Y V = 10V, I = 200mA 100 - - mS fs DS D Admittance *1 Pw10s, Duty cycle 1% *2 Each terminal mounted on a reference land. *3 Pulsed www.rohm.com 2/10 20160905 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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