RHU003N03T106 ROHM

RHU003N03 Transistors 4V Drive Nch MOS FET RHU003N03 z Structure z External dimensions (Unit : mm) Silicon N-channel MOS FET UMT3 2.0 0.9 0.3 0.2 0.7 z Features (3) 1) Low On-resistance. 2) 4V drive. ( ) (1) 2 0.65 0.65 0.15 1.3 (1) Source zApplications Each lead has same dimensions (2) Gate Switching Abbreviated symbol : MN (3) Drain z Packaging specifications z Inner circuit (3) Package Taping Type Code T106 Basic ordering unit (pieces) 3000 (2) RHU003N03 2 (1) Source 1 (2) Gate (3) Drain 1 ESD PROTECTION DIODE (1) 2 BODY DIODE z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS 20 V Continuous ID 300 mA Drain current 1 Pulsed IDP 1.2 A 2 Total power dissipation P 200 mW D Channel temperature Tch 150 C Tstg 55 to +150 C Range of storage temperature 1 Pw10s, Duty cycle1% 2 Each terminal mounted on a recommended land z Thermal resistance Parameter Symbol Limits Unit Channel to ambient Rth(ch-a) 625 C/W Each terminal mounted on a recommended land 1/2 1.25 2.1 0.1Min.RHU003N03 Transistors z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I 10 AV =20V, V =0V GSS GS DS Drain-source breakdown voltage V 30 VI = 1mA, V =0V (BR) DSS D GS Zero gate voltage drain current IDSS 1 AVDS= 30V, VGS=0V Gate threshold voltage VGS (th) 1.0 2.5 V VDS= 10V, ID= 1mA 0.8 1.2 I = 300mA, V = 10V D GS Static drain-source on-state RDS (on) 1.2 1.9 ID= 300mA, VGS= 4.5V resistance 1.4 2.3 ID= 300mA, VGS= 4V Forward transfer admittance Y 0.2 SV = 10V, I = 300mA fs DS D Input capacitance Ciss 20 pF VDS= 10V Output capacitance Coss 13 pF VGS=0V Reverse transfer capacitance Crss 4 pF f=1MHz Turn-on delay time t 7 ns VDD 15V d (on) ID= 150mA Rise time tr 6 ns VGS= 10V Turn-off delay time td (off) 9 ns RL=100 Fall time t 40 ns RG=10 f Pulsed z Body diode characteristics (Source-drain) (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V I = 0.16A, V =0V S GS 2/2