RJU002N06FRAT106 ROHM

RJU002N06FRA Datasheet Nch 60V 200mA Small Signal MOSFET llOutline SOT-323 V 60V DSS SC-70 R (Max.) 2.3 DS(on) UMT3 I 200mA D P 200mW D llInner circuit llFeatures 1) Very fast switching 2) Ultra low voltage drive (2.5V drive) 3) AEC-Q101 Qualified llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code T106 Marking ML llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 60 V DSS I Continuous drain current 200 mA D *1 I Pulsed drain current 800 mA DP V Gate - Source voltage 12 V GSS *2 P Power dissipation 200 mW D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 1/10 20160905 - Rev.001 RJU002N06FRA Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R Thermal resistance, junction - ambient - - 625 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 60 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 48.88 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 60V, V = 0V - - 1 A DSS DS GS drain current I Gate - Source leakage current V = 12V, V = 0V - - 10 A GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 0.5 - 1.5 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -2.0 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 200mA - 1.6 2.3 GS D Static drain - source *3 R V = 4V, I = 200mA - 1.7 2.4 DS(on) GS D on - state resistance V = 2.5V, I = 200mA - 2.2 3.1 GS D Forward Transfer *3 Y V = 10V, I = 200mA 100 - - mS fs DS D Admittance *1 Pw10s, Duty cycle 1% *2 Each terminal mounted on a reference land. *3 Pulsed www.rohm.com 2/10 20160905 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.