X-On Electronics has gained recognition as a prominent supplier of RJU003N03FRAT106 MOSFETs across the USA, India, Europe, Australia, and various other global locations. RJU003N03FRAT106 MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RJU003N03FRAT106 ROHM

RJU003N03FRAT106 electronic component of ROHM
RJU003N03FRAT106 ROHM
RJU003N03FRAT106 MOSFETs
RJU003N03FRAT106  Semiconductors

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See Product Specifications
Part No. RJU003N03FRAT106
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET, N-CH, AEC-Q101, 30V, 0.3A, UMT-3
Datasheet: RJU003N03FRAT106 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4765 ea
Line Total: USD 0.48 
Availability - 4446
Ship by Wed. 19 Mar to Fri. 21 Mar
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4446
Ship by Wed. 19 Mar to Fri. 21 Mar
MOQ : 1
Multiples : 1
1 : USD 0.4765
10 : USD 0.2913
100 : USD 0.1777
500 : USD 0.1236
1000 : USD 0.1005
3000 : USD 0.0936
6000 : USD 0.0808
9000 : USD 0.0739
24000 : USD 0.0728

5575
Ship by Fri. 21 Mar to Thu. 27 Mar
MOQ : 685
Multiples : 1
685 : USD 0.3386

   
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Automotive Qualification Standard
Msl
Svhc
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RJU003N03FRAT106 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RJU003N03FRAT106 and other electronic components in the MOSFETs category and beyond.

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RJU003N03FRA Datasheet Nch 30V 300mA Small Signal MOSFET llOutline SOT-323 V 30V DSS SC-70 R (Max.) 1.1 DS(on) UMT3 I 300mA D P 200mW D llInner circuit llFeatures 1) Very fast switching 2) Ultra low voltage drive (2.5V drive) 3) AEC-Q101 Qualified llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code T106 Marking LP llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 30 V DSS I Continuous drain current 300 mA D *1 I Pulsed drain current 1.2 A DP V Gate - Source voltage 12 V GSS *2 P Power dissipation 200 mW D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 1/10 20160905 - Rev.001 RJU003N03FRA Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R Thermal resistance, junction - ambient - - 625 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 35.0 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current I Gate - Source leakage current V = 12V, V = 0V - - 10 A GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 0.8 - 1.5 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -2.04 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 300mA - 0.8 1.1 GS D Static drain - source *3 R V = 4V, I = 300mA - 0.9 1.3 DS(on) GS D on - state resistance V = 2.5V, I = 300mA - 1.4 1.9 GS D Forward Transfer *3 Y V = 10V, I = 300mA 400 - - mS fs DS D Admittance *1 Pw10s, Duty cycle 1% *2 Each terminal mounted on a reference land. *3 Pulsed www.rohm.com 2/10 20160905 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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