RJU003N03FRA Datasheet Nch 30V 300mA Small Signal MOSFET llOutline SOT-323 V 30V DSS SC-70 R (Max.) 1.1 DS(on) UMT3 I 300mA D P 200mW D llInner circuit llFeatures 1) Very fast switching 2) Ultra low voltage drive (2.5V drive) 3) AEC-Q101 Qualified llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code T106 Marking LP llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 30 V DSS I Continuous drain current 300 mA D *1 I Pulsed drain current 1.2 A DP V Gate - Source voltage 12 V GSS *2 P Power dissipation 200 mW D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 1/10 20160905 - Rev.001 RJU003N03FRA Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R Thermal resistance, junction - ambient - - 625 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 35.0 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current I Gate - Source leakage current V = 12V, V = 0V - - 10 A GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 0.8 - 1.5 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -2.04 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 300mA - 0.8 1.1 GS D Static drain - source *3 R V = 4V, I = 300mA - 0.9 1.3 DS(on) GS D on - state resistance V = 2.5V, I = 300mA - 1.4 1.9 GS D Forward Transfer *3 Y V = 10V, I = 300mA 400 - - mS fs DS D Admittance *1 Pw10s, Duty cycle 1% *2 Each terminal mounted on a reference land. *3 Pulsed www.rohm.com 2/10 20160905 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.