X-On Electronics has gained recognition as a prominent supplier of RJU002N06T106 MOSFETs across the USA, India, Europe, Australia, and various other global locations. RJU002N06T106 MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RJU002N06T106 ROHM

RJU002N06T106 electronic component of ROHM
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See Product Specifications
Part No.RJU002N06T106
Manufacturer: ROHM
Category: MOSFETs
Description: N-Channel 60 V 200mA (Ta) 200mW (Ta) Surface Mount UMT3
Datasheet: RJU002N06T106 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.0845 ea
Line Total: USD 0.42 
Availability - 1521
Ship by Mon. 09 Dec to Thu. 12 Dec
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
1521
Ship by Mon. 09 Dec to Thu. 12 Dec
MOQ : 5
Multiples : 5
5 : USD 0.0845
50 : USD 0.0692
150 : USD 0.0616
500 : USD 0.0559
3000 : USD 0.0429
6000 : USD 0.0406

1364
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 0.4367
10 : USD 0.2695
100 : USD 0.1309
1000 : USD 0.1166
3000 : USD 0.0935
9000 : USD 0.0814
24000 : USD 0.0803
45000 : USD 0.077

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Series
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the RJU002N06T106 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RJU002N06T106 and other electronic components in the MOSFETs category and beyond.

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2.5V Drive Nch MOSFET RJU002N06 z Structure z Dimensions (Unit : mm) Silicon N-channel MOS FET UMT3 2.0 0.9 0.3 0.2 0.7 z Features (3) 1) Low On-resistance. 2) Low voltage drive (2.5V drive). (2) (1) 0.65 0.65 0.15 1.3 (1) Source Each lead has same dimensions zApplications (2) Gate Abbreviated symbol : ML Switching (3) Drain z Packaging specifications z Inner circuit (3) Package Taping Type Code T106 Basic ordering unit (pieces) 3000 RJU002N06 (2) 2 (1) Source 1 (2) Gate (3) Drain 1 ESD PROTECTION DIODE (1) 2 BODY DIODE z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit V 60 V Drain-source voltage DSS Gate-source voltage VGSS 12 V Continuous ID 200 mA Drain current 1 I 800 mA Pulsed DP 2 Total power dissipation PD 200 mW Channel temperature Tch 150 C Range of storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle1% 2 Each terminal mounted on a recommended land z Thermal resistance Parameter Symbol Limits Unit Channel to ambient Rth(ch-a) 625 C/W Each terminal mounted on a recommended land www.rohm.com c 2009.03 - Rev.A 2009 ROHM Co., Ltd. All rights reserved. 1/4 1.25 2.1 0.1Min. RJU002N06 Data Sheet z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AVGS=12V, VDS=0V Drain-source breakdown voltage V(BR) DSS 60 VID= 1mA, VGS=0V Zero gate voltage drain current I 1 AV = 60V, V =0V DSS DS GS Gate threshold voltage VGS (th) 0.5 1.5 V VDS= 10V, ID= 1mA 1.6 2.3 ID= 200mA, VGS= 4.5V Static drain-source on-state R 1.7 2.4 I = 200mA, V = 4V DS (on) D GS resistance 2.2 3.1 ID= 200mA, VGS= 2.5V Forward transfer admittance Yfs 0.1 SVDS= 10V, ID= 200mA Input capacitance C 18 pF V = 10V iss DS Output capacitance Coss 7 pF VGS=0V Reverse transfer capacitance Crss 5 pF f=1MHz Turn-on delay time t 7 ns VDD 30V d (on) ID= 100mA Rise time tr 7 ns VGS= 4V Turn-off delay time td (off) 12 ns RL=300 Fall time t 90 ns RG=10 f Pulsed z Body diode characteristics (Source-drain) (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V I = 0.16A, V =0V S GS www.rohm.com c 2009.03 - Rev.A 2009 ROHM Co., Ltd. All rights reserved. 2/4

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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