CDM22011-600LRFP
www.centralsemi.com
N-CHANNEL
LR POWER MOSFET
DESCRIPTION:
11 AMP, 600 VOLT
The CENTRAL SEMICONDUCTOR CDM22011-600LRFP
is a 600 volt N-Channel MOSFET designed for high
voltage, fast switching applications such as Power
Factor Correction (PFC), lighting and power inverters.
TM
This UltraMOS MOSFET combines high voltage
capability with ultra low r , low threshold voltage,
DS(ON)
and low gate charge for optimal efficiency.
MARKING CODE: CDM11-600LR
TO-220FP CASE
APPLICATIONS: FEATURES:
Power Factor Correction
High voltage capability (V =600V)
DS
Alternative energy inverters
Low gate charge (Q =4.45nC TYP)
gs
Solid State Lighting (SSL)
Ultra low r (0.3 TYP)
DS(ON)
MAXIMUM RATINGS: (T =25C unless otherwise noted)
C
SYMBOL UNITS
Drain-Source Voltage V 600 V
DS
Gate-Source Voltage V 30 V
GS
Continuous Drain Current (Steady State) I 11 A
D
Maximum Pulsed Drain Current, tp=10s I 44 A
DM
Continuous Source Current (Body Diode) I 11 A
S
Maximum Pulsed Source Current (Body Diode) I 44 A
SM
Single Pulse Avalanche Energy (Note 1) E 280 mJ
AS
Power Dissipation P 25 W
D
Operating and Storage Junction Temperature T , T -55 to +150 C
J stg
Thermal Resistance 5.0 C/W
JC
Thermal Resistance 120 C/W
JA
Note 1: L=30mH, I =4.0A, V =100V, R =25, Initial T =25C
AS DD G J
ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted)
C
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
I , I V =30V, V=0 100 nA
GSSF GSSR GS DS
I V =600V, V=0 0.047 1.0 A
DSS DS GS
BV V =0, I=250A 600 V
DSS GS D
V V =V , I=250A 2.0 3.09 4.0 V
GS(th) GS DS D
V V =0, I=11A 0.92 1.4 V
SD GS S
r V =10V, I=5.5A 0.30 0.36
DS(ON) GS D
C V =100V, V =0, f=1.0MHz 2.76 pF
rss DS GS
C V =100V, V =0, f=1.0MHz 763 pF
iss DS GS
C V =100V, V =0, f=1.0MHz 52 pF
oss DS GS
R4 (19-August 2015)CDM22011-600LRFP
N-CHANNEL
LR POWER MOSFET
11 AMP, 600 VOLT
ELECTRICAL CHARACTERISTICS - Continued: (T =25C unless otherwise noted)
C
SYMBOL TEST CONDITIONS TYP UNITS
Q V =480V, V =10V, I =11A (Note 2) 23.05 nC
g(tot) DS GS D
Q V =480V, V =10V, I =11A (Note 2) 4.45 nC
gs DS GS D
Q V =480V, V =10V, I =11A (Note 2) 11.31 nC
gd DS GS D
t V =300V, V =10V, I =11A, R =25 (Note 2) 11 ns
d(on) DD GS D G
t V =300V, V =10V, I =11A, R =25 (Note 2) 27 ns
r DD GS D G
t V =300V, V =10V, I =11A, R =25 (Note 2) 37 ns
d(off) DD GS D G
t V =300V, V =10V, I =11A, R =25 (Note 2) 23 ns
f DD GS D G
t V =0, I =11A, di/dt=100A/s (Note 2) 315 ns
rr GS S
Q V =0, I =11A, di/dt=100A/s (Note 2) 4.0 C
rr GS S
Note 2: Pulse Width < 300s, Duty Cycle < 2%
TO-220FP CASE - MECHANICAL OUTLINE
R4
PIN CONFIGURATION
LEAD CODE:
1) Gate
2) Drain
3) Source
MARKING CODE: CDM11-600LR
R4 (19-August 2015)
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