CDM2208-800FP
www.centralsemi.com
SILICON
N-CHANNEL POWER MOSFET
DESCRIPTION:
8.0 AMP, 800 VOLT
The CENTRAL SEMICONDUCTOR CDM2208-800FP
is an 800 volt N-Channel MOSFET designed for high
voltage, fast switching applications such as Power
Factor Correction (PFC), lighting and power inverters.
This MOSFET combines high voltage capability with
low r , low threshold voltage, and low gate charge
DS(ON)
for optimal efficiency.
MARKING CODE: CDM8-800FP
TO-220FP CASE
APPLICATIONS: FEATURES:
Power Factor Correction
High voltage capability (V =800V)
DS
Alternative energy inverters
Low gate charge (Q =24.45nC TYP)
g(tot)
Solid State Lighting (SSL)
Low r (1.42 TYP)
DS(ON)
MAXIMUM RATINGS: (T =25C unless otherwise noted)
C
SYMBOL UNITS
Drain-Source Voltage V 800 V
DS
Gate-Source Voltage V 30 V
GS
Continuous Drain Current (Steady State) I 8.0 A
D
Maximum Pulsed Drain Current, tp=10s I 32 A
DM
Continuous Source Current (Body Diode) I 8.0 A
S
Maximum Pulsed Source Current (Body Diode) I 32 A
SM
Single Pulse Avalanche Energy (Note 1) E 534 mJ
AS
Power Dissipation P 57 W
D
Operating and Storage Junction Temperature T , T -55 to +150 C
J stg
Thermal Resistance 2.19 C/W
JC
Thermal Resistance 120 C/W
JA
Note 1: L=30mH, I =5.5A, V =135V, R =25, Initial T =25C
AS DD G J
ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted)
C
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
I , I V =30V, V=0 30 100 nA
GSSF GSSR GS DS
I V =800V, V=0 0.05 1.0 A
DSS DS GS
BV V =0, I=250A 800 V
DSS GS D
V V =V , I=250A 2.0 2.9 4.0 V
GS(th) GS DS D
V V =0, I=8.0A 0.9 1.4 V
SD GS S
r V =10V, I=4.0A 1.42 1.6
DS(ON) GS D
C V =25V, V =0, f=1.0MHz 2.7 pF
rss DS GS
C V =25V, V =0, f=1.0MHz 1110 pF
iss DS GS
C V =25V, V =0, f=1.0MHz 104 pF
oss DS GS
R4 (23-December 2015)CDM2208-800FP
SILICON
N-CHANNEL POWER MOSFET
8.0 AMP, 800 VOLT
ELECTRICAL CHARACTERISTICS - Continued: (T =25C unless otherwise noted)
C
SYMBOL TEST CONDITIONS TYP UNITS
Q V =640V, V =10V, I =8.0A (Note 2) 24.45 nC
g(tot) DS GS D
Q V =640V, V =10V, I =8.0A (Note 2) 5.76 nC
gs DS GS D
Q V =640V, V =10V, I =8.0A (Note 2) 9.94 nC
gd DS GS D
t V =400V, I =8.0A, R =25 (Note 2) 19 ns
d(on) DD D G
t V =400V, I =8.0A, R =25 (Note 2) 34 ns
r DD D G
t V =400V, I =8.0A, R =25 (Note 2) 65 ns
d(off) DD D G
t V =400V, I =8.0A, R =25 (Note 2) 37 ns
f DD D G
t V =0, I =8.0A, di/dt=100A/s (Note 2) 310 ns
rr GS S
Q V =0, I =8.0A, di/dt=100A/s (Note 2) 0.53 C
rr GS S
Note 2: Pulse Width < 300s, Duty Cycle < 2%
TO-220FP CASE - MECHANICAL OUTLINE
R4
PIN CONFIGURATION
LEAD CODE:
1) Gate
2) Drain
3) Source
MARKING CODE: CDM8-800FP
R4 (23-December 2015)
www.centralsemi.com