X-On Electronics has gained recognition as a prominent supplier of PHT6NQ10T,135 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PHT6NQ10T,135 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PHT6NQ10T,135 Nexperia

PHT6NQ10T,135 electronic component of Nexperia
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Part No.PHT6NQ10T,135
Manufacturer: Nexperia
Category: MOSFETs
Description: N-Channel 100 V 3A (Ta) 1.8W (Ta), 8.3W (Tc) Surface Mount SOT-223
Datasheet: PHT6NQ10T,135 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6589 ea
Line Total: USD 0.66 
Availability - 56267
Ship by Fri. 27 Dec to Tue. 31 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1
Ship by Tue. 07 Jan to Fri. 10 Jan
MOQ : 1
Multiples : 1
1 : USD 1.0364
10 : USD 1.0133
30 : USD 0.9981
100 : USD 0.9368

56267
Ship by Fri. 27 Dec to Tue. 31 Dec
MOQ : 1
Multiples : 1
1 : USD 0.6589
10 : USD 0.5896
100 : USD 0.4389
500 : USD 0.3927
1000 : USD 0.3729
2000 : USD 0.3575
4000 : USD 0.3432
24000 : USD 0.3355

1082
Ship by Tue. 31 Dec to Mon. 06 Jan
MOQ : 280
Multiples : 1
280 : USD 0.4649

35838
Ship by Tue. 31 Dec to Mon. 06 Jan
MOQ : 1130
Multiples : 1
1130 : USD 0.4316

3880
Ship by Tue. 31 Dec to Mon. 06 Jan
MOQ : 4000
Multiples : 4000
4000 : USD 0.3795

3880
Ship by Tue. 31 Dec to Mon. 06 Jan
MOQ : 4000
Multiples : 4000
4000 : USD 0.7763

   
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RoHS - XON
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We are delighted to provide the PHT6NQ10T,135 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PHT6NQ10T,135 and other electronic components in the MOSFETs category and beyond.

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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of Philips Semiconductors Product specification N-channel TrenchMOS transistor PHT6NQ10T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance V = 100 V DSS Fast switching Low thermal resistance I = 6.5 A D g R 90 m DS(ON) s GENERAL DESCRIPTION PINNING SOT223 N-channel enhancement mode PIN DESCRIPTION 4 field-effect transistor in a plastic envelope using trench 1 gate technology. 2 drain Applications:- Motor and relay drivers 3 source d.c. to d.c. converters 4 drain (tab) 1 23 The PHT6NQ10T is supplied in the SOT223 surface mounting package. LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V Drain-source voltage T = 25 C to 150C - 100 V DSS j V Drain-gate voltage T = 25 C to 150C R = 20 k - 100 V DGR j GS V Gate-source voltage - 20 V GS I Continuous drain current (dc) T = 25 C - 6.5 A D sp T = 25 C - 3 A amb I Continuous drain current (dc) T = 100 C - 4.1 A D sp T = 100 C - 1.9 A amb I Pulsed drain current - 26 A DM P Total power dissipation T = 25 C - 8.3 W D sp T = 25 C - 1.8 W amb T, T Operating junction and - 65 150 C j stg storage temperature THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT R Thermal resistance junction to surface mounted, FR4 12 15 K/W th j-sp solder point board R Thermal resistance junction to surface mounted, FR4 70 - K/W th j-amb ambient board August 1999 1 Rev 1.000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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