X-On Electronics has gained recognition as a prominent supplier of PHT4NQ10T,135 MOSFET across the USA, India, Europe, Australia, and various other global locations. PHT4NQ10T,135 MOSFET are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

PHT4NQ10T,135 Nexperia

PHT4NQ10T,135 electronic component of Nexperia
Images are for reference only
See Product Specifications
Part No.PHT4NQ10T,135
Manufacturer: Nexperia
Category: MOSFET
Description: MOSFET TAPE13 PWR-MOS
Datasheet: PHT4NQ10T,135 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 4000
Multiples : 4000
4000 : USD 0.3182
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.916
10 : USD 0.7826
100 : USD 0.5965
500 : USD 0.4482
1000 : USD 0.3555
N/A

Obsolete
0
MOQ : 4000
Multiples : 4000
4000 : USD 0.214
N/A

Obsolete
0
MOQ : 5
Multiples : 5
5 : USD 0.1177
50 : USD 0.096
150 : USD 0.0852
500 : USD 0.0771
2500 : USD 0.0705
4000 : USD 0.0673
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.202
10 : USD 0.565
100 : USD 0.2945
1000 : USD 0.2281
4000 : USD 0.2072
8000 : USD 0.2049
24000 : USD 0.2014
48000 : USD 0.1968
100000 : USD 0.1956
N/A

Obsolete
0
MOQ : 34
Multiples : 1
34 : USD 0.297
50 : USD 0.2822
100 : USD 0.2406
250 : USD 0.2262
500 : USD 0.2216
1000 : USD 0.2216
3000 : USD 0.2216
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
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Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
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Taric
Typical Turn-On Delay Time
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We are delighted to provide the PHT4NQ10T,135 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PHT4NQ10T,135 and other electronic components in the MOSFET category and beyond.

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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of PHT4NQ10T TrenchMOS standard level FET Rev. 02 2 May 2002 Product data M3D087 1. Description N-channel enhancement mode eld-effect transistor in a plastic package using TrenchMOS technology. Product availability: PHT4NQ10T in SOT223. 2. Features TrenchMOS technology Very fast switching Surface mount package. 3. Applications Primary side switch in DC to DC converters High speed line driver Fast general purpose switch. 4. Pinning information Table 1: Pinning - SOT223, simplied outline and symbol Pin Description Simplied outline Symbol 1 gate (g) 4 d 2 drain (d) 3 source (g) g 4 drain (d) s 123 MBB076 MSB002 - 1 Top view SOT223

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.

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