X-On Electronics has gained recognition as a prominent supplier of PHT4NQ10T,135 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PHT4NQ10T,135 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PHT4NQ10T,135 Nexperia

Name: PHT4NQ10T,135
Brand: Nexperia
SKU: PHT4NQ10T135_Nexperia
Availability: InStock
Rating: 5 (11 reviews)

PHT4NQ10T,135 electronic component of Nexperia

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See Product Specifications

Part No.	PHT4NQ10T,135
Manufacturer:	Nexperia
Category:	MOSFETs
Description:	MOSFET TAPE13 PWR-MOS
Datasheet:	PHT4NQ10T,135 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

2173: USD 0.2158 ea
Line Total: USD 468.93

Availability - 242136
Ship by Fri. 07 Mar to Thu. 13 Mar

MOQ: 2173 Multiples: 1
Pack Size: 1

PHT4NQ10T,135 More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

242136

Ship by Fri. 07 Mar to Thu. 13 Mar

MOQ : 2173
Multiples : 1

2173 : USD 0.2158

Specifications

Manufacturer

Nexperia Nexperia

Product Category

MOSFETs MOSFETs

RoHS - XON

y y

Id - Continuous Drain Current

3.5 A 3.5 A

Vds - Drain-Source Breakdown Voltage

100 V 100 V

Rds On - Drain-Source Resistance

250 mOhms 250 mOhms

Transistor Polarity

n - channel n - channel

Minimum Operating Temperature

- 65 C - 65 C

Maximum Operating Temperature

+ 150 C + 150 C

Pd - Power Dissipation

6.9 W 6.9 W

Mounting Style

smd/smt smd/smt

Package / Case

SC - 73 SC - 73

Packaging

Reel Reel

Technology

si si

Number of Channels

1 channel 1 channel

Vgs - Gate-Source Voltage

20 V 20 V

Channel Mode

enhancement enhancement

Configuration

single dual drain single dual drain

Brand

Nexperia Nexperia

Continuous Drain Current

3.5 A 3.5 A

Drain-Source Breakdown Voltage

100 V 100 V

Gate-Source Breakdown Voltage

+/- 20 V +/- 20 V

Power Dissipation

6.9 W 6.9 W

Rds On

250 mohms 250 mohms

Fall Time

11 ns 11 ns

Rise Time

13 ns 13 ns

Factory Pack Quantity :

4000 4000

Typical Turn-Off Delay Time

20 ns 20 ns

Height

1.7 mm 1.7 mm

Length

6.7 mm 6.7 mm

Transistor Type

1 n - channel 1 n - channel

Width

3.7 mm 3.7 mm

Cnhts

8541210000 8541210000

Hts Code

8541290075 8541290075

Mxhts

85412999 85412999

Product Type

mosfet mosfet

Subcategory

Mosfets Mosfets

Taric

8541290000 8541290000

Typical Turn-On Delay Time

8 ns 8 ns

Category

Mosfets Mosfets

Brand Category

Nexperia Nexperia

Notes:- Show Stocked Products With Similar Attributes.

PHT4NQ10T,135 Alternative Parts

We are delighted to provide the PHT4NQ10T,135 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PHT4NQ10T,135 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of PHT4NQ10T TrenchMOS standard level FET Rev. 02 2 May 2002 Product data M3D087 1. Description N-channel enhancement mode eld-effect transistor in a plastic package using TrenchMOS technology. Product availability: PHT4NQ10T in SOT223. 2. Features TrenchMOS technology Very fast switching Surface mount package. 3. Applications Primary side switch in DC to DC converters High speed line driver Fast general purpose switch. 4. Pinning information Table 1: Pinning - SOT223, simplied outline and symbol Pin Description Simplied outline Symbol 1 gate (g) 4 d 2 drain (d) 3 source (g) g 4 drain (d) s 123 MBB076 MSB002 - 1 Top view SOT223

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

NEXPERIA USA INC
Nexperia USA Inc.

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Availability	Price	Buy Price	Quantity
242136 Ship by Fri. 07 Mar to Thu. 13 Mar MOQ : 2173 Multiples : 1	2173 : USD 0.2158

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