X-On Electronics has gained recognition as a prominent supplier of PHT6N06LT MOSFETs across the USA, India, Europe, Australia, and various other global locations. PHT6N06LT MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PHT6N06LT Nexperia

PHT6N06LT electronic component of Nexperia

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See Product Specifications

Part No.	PHT6N06LT
Manufacturer:	Nexperia
Category:	MOSFETs
Description:	MOSFET Low-voltage NPN Darlington transistor optimized for medium current.
Datasheet:
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

250: USD 0.4373 ea
Line Total: USD 109.32

Availability - 0

MOQ: 250 Multiples: 1
Pack Size: 1

PHT6N06LT More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 31 Jan to Thu. 06 Feb MOQ : 250 Multiples : 1	250 : USD 0.4373 1000 : USD 0.3481 2000 : USD 0.2959 6000 : USD 0.2577 20000 : USD 0.2303

Specifications

Manufacturer Nexperia Nexperia
Product Category MOSFETs MOSFETs
Transistor Polarity N Channel N Channel
Brand Nexperia Nexperia
Continuous Drain Current Id 2.5 A 2.5 A
Drain Source Voltage Vds 55 V 55 V
On Resistance Rdson 0.15 Ohms 0.15 Ohms
Rdson Test Voltage Vgs 5 V 5 V
Threshold Voltage Vgs 1.5 V 1.5 V
Power Dissipation Pd 8.3 W 8.3 W
Transistor Case Style SOT - 223 SOT - 223
No. Of Pins 3Pins 3Pins
Operating Temperature Max 150 C 150 C
Svhc No SVHC (15 - Jan - 2018) No SVHC (15 - Jan - 2018)
Current Id Max 5.5 A 5.5 A
Current Temperature 25 C 25 C
No. Of Transistors 1 1
Operating Temperature Min - 55 C - 55 C
Operating Temperature Range - 55 C to + 150 C - 55 C to + 150 C
Power Dissipation Ptot Max 8.3 W 8.3 W
Pulse Current Idm 10 A 10 A
Termination Type Surface Mount Device Surface Mount Device
Voltage Vds Typ 55 V 55 V
Voltage Vgs Max 13 V 13 V
Voltage Vgs Rds On Measurement 5 V 5 V

We are delighted to provide the PHT6N06LT from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PHT6N06LT and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

Nexperia PHT6N06LT is a P-channel Field Effect Transistors (FET) made using a small-signal N-type metal oxide semiconductor (MOS) process. It is designed for high frequency, low-power applications. The device has a low breakdown voltage of -60 V, low on-resistance of 6 O, and high maximum drain current of -150 mA. Additionally, it has a maximum frequency of 4 GHz, making it suitable for use in high speed switching applications such as high frequency, non-power amplifiers or in battery powered devices.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

NEXPERIA USA INC
Nexperia USA Inc.

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