LOTNo.
LOTNo.
MCH3474
Power MOSFET
30V, 50m , 4A, Single N-Channel
This Power MOSFET is produced using ON Semiconductors trench
technology, which is specifically designed to minimize gate charge and low
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on resistance. This device is suitable for applications with low gate charge
driving or low on resistance requirements.
Features
Low On-Resistance V R (on) Max I
DSS DS D Max
High Speed Switching 50m @ 4.5V
1.8V drive
30V 72m @ 2.5V 4A
ESD Diode-Protected Gate 130m @ 1.8V
Pb-Free, Halogen Free and RoHS compliance
ELECTRICAL CONNECTION
Typical Applications
N-Channel
DC/DC Converter
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1)
Parameter SymbolValue Unit
Drain to Source Voltage V 30V
DSS
Gate to Source Voltage V 12 V
GSS
Drain Current (DC) I 4A
D
Drain Current (Pulse)
I 16
DP A
PW 10s, duty cycle 1%
PACKING TYPE : TL MARKING
Power Dissipation
When mounted on ceramic substrate P 1
D W
2
(900mm 0.8mm)
FF
Junction Temperature Tj 150 C
Storage Temperature Tstg 55 to +150 C
TL
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping
THERMAL RESISTANCE RATINGS
information on page 5 of this data sheet.
Parameter SymbolValue Unit
Junction to Ambient
When mounted on ceramic substrate R 125 C/W
JA
2
(900mm 0.8mm)
Semiconductor Components Industries, LLC, 2015
1 Publication Order Number :
June 2015 - Rev. 1
MCH3474/D MCH3474
ELECTRICAL CHARACTERISTICS at Ta = 25C (Note 2)
Value
Parameter Symbol Conditions Unit
min typ max
Drain to Source Breakdown Voltage V( ) I =1mA, V=0V 30 V
BR DSS D GS
Zero-Gate Voltage Drain Current I V =30V, V=0V 1 A
DSS DS GS
Gate to Source Leakage Current I V =8V, V=0V 10 A
GSS GS DS
Gate Threshold Voltage V (th) V =10V, I=1mA 0.4 1.3V
GS DS D
Forward Transconductance g V =10V, I=2A 2.0 3.4 S
FS DS D
R (on)1 I =2A, V=4.5V 38 50m
DS D GS
Static Drain to Source On-State
51 72
R (on)2 I =1A, V =2.5V m
DS D GS
Resistance
R (on)3 I =0.5A, V =1.8V 80 130 m
DS D GS
Input Capacitance Ciss 430 pF
Output Capacitance Coss 59 pF
V =10V, f=1MHz
DS
Reverse Transfer Capacitance Crss 38 pF
Turn-ON Delay Time t (on) 10 ns
d
Rise Time t 41 ns
r
See specified Test Circuit
Turn-OFF Delay Time 36 ns
t (off)
d
Fall Time 37 ns
t
f
Total Gate Charge Qg 4.7 nC
Gate to Source Charge Qgs 0.8 nC
V =15V, V =4.5V, I =4A
DS GS D
Gate to Drain Miller Charge Qgd 1.1 nC
Forward Diode Voltage V
SD I =4A, V=0V 0.82 1.2V
S GS
Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
V =15V
DD
V
IN
4.5V I =2A
D
0V
R =7.5
L
V
V
IN D
OUT
PW=10s
D.C.1%
G
P.G
50
MCH3474
S
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2