LOT No. LOT No. MCH3477 Power MOSFET www.onsemi.com 20V, 38m, 4.5A, Single N-Channel V R (on) Max I DSS DS D Max Features 38 m 4.5V High Speed Switching 20V 61 m 2.5V 4.5A 1.8V Drive 99 m 1.8V ESD Diode - Protected Gate Low On-Resistance Pb-Free, Halogen Free and RoHS Compliance Electrical Connection N-Channel Specifications 3 Absolute Maximum Ratings at Ta = 25C Parameter Symbol Value Unit Drain to Source Voltage V 20V DSS Gate to Source Voltage V 12 V GSS 1 Drain Current (DC) I 4.5A D 1:Gate Drain Current (Pulse) A I 18 DP 2:Source PW 10s, duty cycle1% 3:Drain 2 Power Dissipation When mounted on ceramic substrate P 1.0 W D 2 (900mm 0.8mm) Packing Type:TL Marking Junction Temperature Tj 150 C C Storage Temperature Tstg 55 to +150 FJ Thermal Resistance Ratings Parameter Symbol Value Unit TL Junction to Ambient When mounted on ceramic substrate R 125 C/W JA 2 (900mm 0.8mm) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number : January 2015 - Rev. 2 MCH3477/D MCH3477 Electrical Characteristics at Ta 25 C Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I =1mA, V=0V 20 V BR DSS D GS Zero-Gate Voltage Drain Current I V =20V, V=0V 1 A DSS DS GS Gate to Source Leakage Current I V =8V, V=0V 10 A GSS GS DS Gate Threshold Voltage V(th) V =10V, I=1mA 0.4 1.3V GS DS D Forward Transconductance g V =10V, I=2A 2.0 3.4 S FS DS D R(on)1 I =2A, V=4.5V 29 38m DS D GS Static Drain to Source On-State Resistance R(on)2 I =1A, V=2.5V 43 61m DS D GS R(on)3 I =0.5A, V=1.8V 69 99m DS D GS Input Capacitance Ciss 410 pF Output Capacitance Coss V =10V, f=1MHz 84 pF DS Reverse Transfer Capacitance Crss 59 pF Turn-ON Delay Time t (on) 7.5 ns d Rise Time t 26 ns r See specified Test Circuit Turn-OFF Delay Time t (off) 38 ns d Fall Time t 32 ns f Total Gate Charge Qg 5.1 nC Gate to Source Charge Qgs V =10V, V =4.5V, I =4.5A 0.7 nC DS GS D Gate to Drain Miller Charge Qgd 1.7 nC Forward Diode Voltage V I =4.5A, V=0V 0.78 1.2V SD S GS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit V V =10V DD IN 4.5V 0V I =2A D V IN R =5 L D V OUT PW=10s D.C.1% G MCH3477 P.G 50 S www.onsemi.com 2