LOT No. LOT No. MCH3484 Power MOSFET www.onsemi.com 20V, 40m , 4.5A, Single N-Channel Electrical Connection Features N-Channel On-Resistance R (on)1=33m (typ) DS 3 0.9V Drive Pb-Free, Halogen Free and RoHS Compliance ESD Diode - Protected Gate 1 Specifications 1 : Gate Absolute Maximum Ratings at Ta = 25C 2 : Source Parameter Symbol Value Unit 3 : Drain 2 Drain to Source Voltage V 20V DSS V Gate to Source Voltage V 5 GSS A Drain Current (DC) I 4.5 D Packing Type : TL Marking Drain Current (Pulse) A I 18 DP PW 10s, duty cycle1% Power Dissipation FR When mounted on ceramic substrate P 1.0W D 2 (900mm 0.8mm) Junction Temperature Tj 150 C TL Operating Temperature Topr 5 to +150 C Storage Temperature Tstg 55 to +150 C Thermal Resistance Ratings Parameter Symbol Value Unit Junction to Ambient R When mounted on ceramic substrate 125 JA C/W 2 (900mm 0.8mm) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number : January 2015 - Rev. 2 MCH3484/D MCH3484 Electrical Characteristics at Ta 25 C Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I =1mA, V=0V 20 V BR DSS D GS Zero-Gate Voltage Drain Current I V =20V, V=0V 1 A DSS DS GS Gate to Source Leakage Current I V =4V, V=0V 10 A GSS GS DS Gate Threshold Voltage V(th) V =10V, I=1mA 0.3 0.8V GS DS D Forward Transconductance g V =10V, I=2A 5.6 S FS DS D R(on)1 I =2A, V=2.5V 33 40m DS D GS R(on)2 I =1A, V=1.8V 37 49m DS D GS Static Drain to Source On-State Resistance R(on)3 I =0.5A, V=1.2V 79 119m DS D GS R(on)4 I =0.1A, V=0.9V 165 330m DS D GS Input Capacitance Ciss 630 pF Output Capacitance Coss V =10V, f=1MHz 75 pF DS Reverse Transfer Capacitance Crss 65 pF Turn-ON Delay Time t (on) 8.9 ns d Rise Time t 49 ns r See specified Test Circuit Turn-OFF Delay Time t (off) 63 ns d Fall Time t 57 ns f Total Gate Charge Qg 11 nC Gate to Source Charge Qgs V =10V, V =2.5V, I =4.5A 0.9 nC DS GS D Gate to Drain Miller Charge Qgd 1.8 nC Forward Diode Voltage V I =4.5A, V=0V 0.8 1.2V SD S GS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit V V =10V IN DD 2.5V 0V I =2A D V IN R =5 L D V OUT PW=10 s D.C.1% G MCH3484 P.G 50 S www.onsemi.com 2