X-On Electronics has gained recognition as a prominent supplier of MCH3486-TL-H MOSFETs across the USA, India, Europe, Australia, and various other global locations. MCH3486-TL-H MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

MCH3486-TL-H ON Semiconductor

MCH3486-TL-H electronic component of ON Semiconductor
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Part No.MCH3486-TL-H
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: ON Semiconductor MOSFET NCH 4V DRIVE SERIES
Datasheet: MCH3486-TL-H Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
910: USD 0.1375 ea
Line Total: USD 125.13 
Availability - 3301
Ship by Fri. 15 Nov to Wed. 20 Nov
MOQ: 910  Multiples: 1
Pack Size: 1
Availability Price Quantity
3301
Ship by Fri. 15 Nov to Wed. 20 Nov
MOQ : 910
Multiples : 1
910 : USD 0.1375

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Series
Brand
Factory Pack Quantity :
Configuration
Transistor Type
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the MCH3486-TL-H from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MCH3486-TL-H and other electronic components in the MOSFETs category and beyond.

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LOT No. LOT No. MCH3486 Power MOSFET www.onsemi.com 60V, 137m, 2A, Single N-Channel Features VV R R (on(on)) Ma Maxx II MaxMax DSSDSS DD DSDS Low R (on) 137 m137 m 10V 10V DS 60V 60V 2A 2A 192 m192 m 4. 4.55VV 4V Drive 217 m217 m 4V 4V ESD Diode-Protected Gate Pb-Free, Halogen Free and RoHS Compliance Small Surface Mount Package (MCPH3) Electrical Connection N-Channel Specifications 3 Absolute Maximum Ratings at Ta = 25C Parameter Symbol Value Unit Drain to Source Voltage V 60V DSS Gate to Source Voltage V 20 V GSS 1 Drain Current (DC) I 2A D 1:Gate Drain Current (Pulse) I 8A DP 2:Source PW10s, duty cycle1% 3:Drain 2 Power Dissipation When mounted on ceramic substrate P 1 W D 2 (900mm 0.8mm) Junction Temperature Tj 150 C Packing Type:TL Marking Storage Temperature Tstg 55 to +150 C Thermal Resistance Ratings FT Parameter Symbol Value Unit TL Junction to Ambient When mounted on ceramic substrate R 125 C/W JA 2 (900mm 0.8mm) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number : October 2014 - Rev. 1 MCH3486/D MCH3486 Electrical Characteristics at Ta = 25C Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I =1mA, V=0V 60 V BR DSS D GS Zero-Gate Voltage Drain Current I V =60V, V=0V 1 A DSS DS GS Gate to Source Leakage Current I V =16V, V=0V 10 A GSS GS DS Gate Threshold Voltage V(th) V =10V, I=1mA 1.2 2.6V GS DS D Forward Transconductance g V =10V, I=1A 1.8 S FS DS D R(on)1 I =1A, V=10V 105 137m DS D GS Static Drain to Source On-State Resistance R(on)2 I =0.5A, V=4.5V 137 192m DS D GS R(on)3 I =0.5A, V=4V 155 217m DS D GS Input Capacitance Ciss 310 pF Output Capacitance Coss V =20V, f=1MHz 40 pF DS Reverse Transfer Capacitance Crss 25 pF Turn-ON Delay Time t (on) 6 ns d Rise Time t 5 ns r See specified Test Circuit Turn-OFF Delay Time t (off) 28 ns d Fall Time t 11 ns f Total Gate Charge Qg 7 nC Gate to Source Charge Qgs V =30V, V =10V, I =2A 1 nC DS GS D Gate to Drain Miller Charge Qgd 1.3 nC Forward Diode Voltage V I =2A, V=0V 0.83 1.2V SD S GS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit V V =30V DD IN 10V 0V I =1A D V IN R =30 L D V OUT PW=10s D.C.1% G MCH3486 P.G 50 S www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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