Ordering number : ENA1912 MCH4017 RF Transistor MCH4017 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =5V, I =0A 1.0 A CBO CB E Emitter Cutoff Current I V =1V, I =0A 1.0 A EBO EB C DC Current Gain h V =5V, I =50mA 60 150 FE CE C Gain-Bandwidth Product f V =5V, I =30mA 8 10 GHz T CE C 2 Forward Transfer Gain S21e V =5V, I =30mA, f=1GHz 14 17 dB CE C Noise Figure NF V =5V, I =10mA, f=1GHz 1.2 1.8 dB CE C Pay attention to handling since it is liable to be affected by static electricity due to the high-frequency process adopted. I -- V I -- V C CE C BE 100 100 V =5V CE 90 90 80 80 70 70 60 60 50 50 40 40 30 30 20 20 10 10 I =0 A B 0 0 012 46 8 102 0 0.2 0.4 0.6 0.8 1.0 Collector-to-Emitter Voltage, V -- V IT16280 Base-to-Emitter Voltage, V -- V IT16281 CE BE h -- I Cob -- V FE C CB 1000 10 f=1MHz V =5V CE 7 7 5 5 3 3 2 2 100 1.0 7 7 5 5 3 3 2 2 10 0.1 253 7 253 7 25373253 7 257 1.0 10 100 0.1 1.0 10 100 Collector Current, I -- mA IT16282 Collector-to-Base Voltage, V -- V IT16283 C CB Cre -- V f -- I CB T C 100 1.0 f=1MHz V =5V CE 7 f=1GHz 5 7 3 5 2 10 3 7 5 2 3 2 0.1 1.0 25373253 7 257 23 5 7 23 5 7 0.1 1.0 10 100 1.0 10 100 Collector-to-Base Voltage, V -- V IT16284 IT16285 Collector Current, I -- mA CB C No. A1912-2/9 400 A 300 A 200 A 100 A 500 A 600 A 700 A 800 A 900A 1000A DC Current Gain, h Collector Current, I -- mA Reverse Transfer Capacitance, Cre -- pF FE C Gain-Bandwidth Product, f -- GHz Output Capacitance, Cob -- pF Collector Current, I -- mA T C