LOT No. LOT No. Ordering number : ENA1280A MCH4020 RF Transistor MCH4020 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =5V, I =0A 1.0 A CBO CB E Emitter Cutoff Current I V =1V, I =0A 1.0 A EBO EB C DC Current Gain h V =5V, I =50mA 60 150 FE CE C Gain-Bandwidth Product f V =5V, I =50mA 13 16 GHz T CE C 2 Forward Transfer Gain S21e V =5V, I =50mA, f=1GHz 17.5 dB CE C Noise Figure NF V =1V, I =10mA, f=1GHz 1.2 1.8 dB CE C Note) Pay attention to handling since it is liable to be affected by static electricity due to the high-frequency process adopted. Ordering Information Device Package Shipping memo MCH4020-TL-H MCPH4 3,000pcs./reel Pb Free and Halogen Free I -- V I -- V C CE C BE 140 150 120 120 100 90 80 60 60 40 30 20 I =0mA B 0 0 062 4 8 0 0.2 0.4 0.6 0.8 1.0 1.2 Base-to-Emitter Voltage, V -- V Collector-to-Emitter Voltage, V -- V IT13901 IT13902 BE CE h -- I Cre -- V FE C CB 2 1.0 f=1MHz 7 100 5 7 5 3 3 2 2 253 7 253 7 23 23 5 7 23 5 7 1.0 10 100 0.1 1.0 10 Collector Current, I -- mA IT13903 Collector-to-Base Voltage, V -- V IT13904 C CB No. A1280-2/11 V =5V CE 1V 1.2mA 0.9mA 0.6mA 0.3mA 1.5mA 5V V =1V CE DC Current Gain, h Collector Current, I -- mA FE C Reverse Transfer Capacitance, Cre -- pF Collector Current, I -- mA C