LOTNo.
LOTNo.
MCH6336
Power MOSFET
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12V, 43m , 5A, Single P-Channel
Features V R (on) Max I
DSS DS D Max
Low On-Resistance
43m @ 4.5V
1.8V Drive 12V 66m @ 2.5V 5A
High Speed Switching
98m @ 1.8V
ESD Diode-Protected Gate
Pb-Free and RoHS Compliance
Halogen Free Compliance : MCH6336-TL-H, MCH6336-TL-W
Electrical Connection
P-Channel
Specifications
1,2,5,6
Absolute Maximum Ratings at Ta = 25C
Parameter Symbol Value Unit
Drain to Source Voltage V 12 V
DSS
1:Drain
Gate to Source Voltage V 10 V
GSS
3
2:Drain
Drain Current (DC) I 5A
D
3:Gate
4:Source
Drain Current (Pulse)
A 5:Drain
I 20
DP
PW10s, duty cycle1%
6:Drain
4
Power Dissipation
When mounted on ceramic substrate P 1.5 W
D
2
(1200mm 0.8mm)
Packing Type : TL Marking
Junction Temperature Tj 150 C
C
Storage Temperature Tstg 55 to +150
YK
Thermal Resistance Ratings
TL
Parameter Symbol Value Unit
Junction to Ambient
C/W
When mounted on ceramic substrate R 83.3
JA
2
(1200mm 0.8mm)
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of this data sheet.
Semiconductor Components Industries, LLC, 2015
1 Publication Order Number :
March 2015 - Rev. 2
MCH6336/D MCH6336
Electrical Characteristics at Ta = 25C
Value
Parameter Symbol Conditions Unit
min typ max
Drain to Source Breakdown Voltage V( ) I =1mA, V=0V 12 V
BR DSS D GS
Zero-Gate Voltage Drain Current I V =12V, V=0V 10 A
DSS DS GS
Gate to Source Leakage Current I V =8V, V=0V 10 A
GSS GS DS
Gate Threshold Voltage V(th) V =6V, I =1mA 0.4 1.4 V
GS DS D
Forward Transconductance g V =6V, I =3A 4.8 8.1 S
FS DS D
R(on)1 I =3A, V =4.5V 33 43m
DS D GS
Static Drain to Source On-State Resistance R(on)2 I =1.5A, V =2.5V 47 66m
DS D GS
R(on)3 I =0.5A, V =1.8V 68 98m
DS D GS
Input Capacitance
Ciss 660 pF
Output Capacitance
Coss V =6V, f=1MHz 210 pF
DS
Reverse Transfer Capacitance
Crss 155 pF
Turn-ON Delay Time
t (on) 7.4 ns
d
Rise Time
t 57 ns
r
See specified Test Circuit
Turn-OFF Delay Time
t (off) 72 ns
d
Fall Time
t 69 ns
f
Total Gate Charge
Qg 6.9 nC
Gate to Source Charge
Qgs V =6V, V =4.5V, I =5A 1.2 nC
DS GS D
Gate to Drain Miller Charge
Qgd 1.8 nC
Forward Diode Voltage
V I =5A, V=0V 0.83 1.2 V
SD S GS
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
V =--6V
V
IN DD
0V
--4.5V
I =--3A
D
V
IN
R =2
L
D V
OUT
PW=10s
D.C.1%
G
MCH6336
P.G
50
S
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2