X-On Electronics has gained recognition as a prominent supplier of MCH6342-TL-H MOSFETs across the USA, India, Europe, Australia, and various other global locations. MCH6342-TL-H MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

MCH6342-TL-H ON Semiconductor

MCH6342-TL-H electronic component of ON Semiconductor
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See Product Specifications
Part No.MCH6342-TL-H
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET SWITCHING DEVICE
Datasheet: MCH6342-TL-H Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5665 ea
Line Total: USD 0.57 
Availability - 820
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
820
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.5665
10 : USD 0.4862
100 : USD 0.3674
500 : USD 0.2926
1000 : USD 0.2189
3000 : USD 0.198
9000 : USD 0.1958
24000 : USD 0.1892
45000 : USD 0.1859

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MCH6342-TL-H from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MCH6342-TL-H and other electronic components in the MOSFETs category and beyond.

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LOTNo. LOTNo. MCH6342 Power MOSFET 30V, 73m , 4.5A, Single P-Channel This Power MOSFET is produced using ON Semiconductors trench technology, which is specifically designed to minimize gate charge and low www.onsemi.com on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features Low On-Resistance V R (on) Max I DSS DS D Max 1.8V drive 73m 4.5V High Speed Switching 30V 99m 2.5V 4.5A ESD Diode-Protected Gate 155m 1.8V Pb-Free, Halogen Free and RoHS compliance ELECTRICAL CONNECTION Typical Applications P-Channel DC/DC Converter 1,2,5,6 SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1) Parameter SymbolValue Unit 1:Drain Drain to Source Voltage V 30 V DSS 2:Drain 3 3:Gate Gate to Source Voltage V 10 V GSS 4:Source Drain Current (DC) I 4.5 A 5:Drain D 6:Drain Drain Current (Pulse) 4 I 18 DP A PW 10s, duty cycle 1% Power Dissipation PACKING TYPE : TL MARKING When mounted on ceramic substrate P 1.5 D W 2 (1500mm 0.8mm) Junction Temperature Tj 150 C YR Storage Temperature Tstg 55 to +150 C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage TL the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping THERMAL RESISTANCE RATINGS information on page 5 of this data sheet. Parameter SymbolValue Unit Junction to Ambient When mounted on ceramic substrate R 83.3 C/W JA 2 (1500mm 0.8mm) Semiconductor Components Industries, LLC, 2015 1 Publication Order Number : July 2015 - Rev. 2 MCH6342/D MCH6342 ELECTRICAL CHARACTERISTICS at Ta = 25C (Note 2) Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I =1mA, V=0V 30 V BR DSS D GS Zero-Gate Voltage Drain Current I V =30V, V=0V 1 A DSS DS GS Gate to Source Leakage Current I V =8V, V=0V 10 A GSS GS DS Gate Threshold Voltage V (th) V =10V, I =1mA 0.4 1.3 V GS DS D Forward Transconductance g V =10V, I =2A 3.4 5.8 S FS DS D R (on)1 I =2A, V =4.5V 56 73m DS D GS Static Drain to Source On-State 71 99 R (on)2 I =1A, V =2.5V m DS D GS Resistance R (on)3 I =0.3A, V =1.8V 95 155 m DS D GS Input Capacitance Ciss 650 pF Output Capacitance Coss 105 pF V =10V, f=1MHz DS Reverse Transfer Capacitance Crss 83 pF Turn-ON Delay Time t (on) 8.2 ns d Rise Time t 28 ns r See specified Test Circuit Turn-OFF Delay Time 100 ns t (off) d Fall Time 60 ns t f Total Gate Charge Qg 8.6 nC Gate to Source Charge Qgs 1.3 nC V =15V, V =4.5V, I =4.5A DS GS D Gate to Drain Miller Charge Qgd 2.4 nC Forward Diode Voltage V SD I =4.5A, V=0V 0.83 1.2 V S GS Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit V V =--15V DD IN 0V --4.5V I =--2A D V IN R =7.5 L D V OUT PW=10s D.C.1% G MCH6342 P.G 50 S www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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