LOT No. LOT No. Ordering number : ENA2206 MCH6353 P-Channel Power MOSFET MCH6353 Electrical Characteristics at Ta = 25C Ratings Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I =-1mA, V=0V -12 V BR DSS D GS Zero-Gate Voltage Drain Current I V =-12V, V=0V -1 A DSS DS GS Gate to Source Leakage Current I V =8V, V=0V 1 A GSS GS DS Cutoff Voltage V(off) V =-6V, I=-1mA -0.4 -1.4V GS DS D Forward Transfer Admittance yfs V =-6V, I=-3A 11 S DS D R(on)1 I =-3A, V=-4.5V 29 35m DS D GS R(on)2 I =-1.5A, V=-2.5V 38 48m Static Drain to Source On-State DS D GS Resistance R(on)3 I =-0.5A, V=-1.8V 52 78m DS D GS R(on)4 I =-0.5A, V=-1.5V 70 140m DS D GS Input Capacitance Ciss 1250 pF Output Capacitance Coss V =-6V, f=1MHz 160 pF DS Reverse Transfer Capacitance Crss 150 pF Turn-ON Delay Time t (on) 8.4 ns d Rise Time t 48 ns r See specified Test Circuit. Turn-OFF Delay Time t (off) 165 ns d Fall Time t 68 ns f Total Gate Charge Qg 12 nC Gate to Source Charge Qgs V =-6V, V =-4.5V, I =-6A 1.7 nC DS GS D Gate to Drain Miller Charge Qgd 2.1 nC Diode Forward Voltage V I =-6A, V=0V -0.9 -1.2V SD S GS Switching Time Test Circuit No.A2206-2/6