X-On Electronics has gained recognition as a prominent supplier of MCH6437-TL-E MOSFETs across the USA, India, Europe, Australia, and various other global locations. MCH6437-TL-E MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

MCH6437-TL-E ON Semiconductor

MCH6437-TL-E electronic component of ON Semiconductor
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Part No.MCH6437-TL-E
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: ON Semiconductor MOSFET SWITCHING DEVICE
Datasheet: MCH6437-TL-E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 1.1159
10 : USD 0.5254
100 : USD 0.2848
500 : USD 0.2289
1000 : USD 0.1823
3000 : USD 0.1688
6000 : USD 0.1595
9000 : USD 0.147
24000 : USD 0.1429
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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We are delighted to provide the MCH6437-TL-E from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MCH6437-TL-E and other electronic components in the MOSFETs category and beyond.

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LOTNo. LOTNo. MCH6437 Power MOSFET www.onsemi.com 20V, 24m , 7A, Single N-Channel Features V R (on) Max I DSS DS D Max Low On-Resistance 24m 4.5V 1.8V Drive 20V 35m 2.5V 7A ESD Diode-Protected Gate 65m 1.8V Pb-Free and RoHS Compliance Specifications Electrical Connection N-Channel Absolute Maximum Ratings at Ta = 25C Unit Parameter Symbol Value 1,2,5,6 Drain to Source Voltage V 20V DSS Gate to Source Voltage V 12 V GSS Drain Current (DC) I 7A D 1:Drain Drain Current (Pulse) 3 2:Drain A I 28 DP PW10s, duty cycle1% 3:Gate 4:Source Power Dissipation 5:Drain When mounted on ceramic substrate P 1.5W D 6:Drain 4 2 (1200mm 0.8mm) C Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 Packing Type : TL Marking Thermal Resistance Ratings Parameter Symbol Value Unit ZL Junction to Ambient TL C/W When mounted on ceramic substrate R 83.3 JA 2 (1200mm 0.8mm) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number : March 2015 - Rev. 3 MCH6437/D MCH6437 Electrical Characteristics at Ta = 25C Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I =1mA, V=0V 20 V BR DSS D GS Zero-Gate Voltage Drain Current I V =20V, V=0V 1 A DSS DS GS Gate to Source Leakage Current I V =8V, V=0V 10 A GSS GS DS Gate Threshold Voltage V(th) V =10V, I=1mA 0.4 1.3V GS DS D Forward Transconductance g V =10V, I=4A 6.2 S FS DS D R(on)1 I =4A, V=4.5V 18 24m DS D GS Static Drain to Source On-State Resistance R(on)2 I =2A, V=2.5V 25 35m DS D GS R(on)3 I =1A, V=1.8V 38 65m DS D GS Input Capacitance Ciss 660 pF Output Capacitance Coss V =10V, f=1MHz 125 pF DS Reverse Transfer Capacitance Crss 100 pF Turn-ON Delay Time t (on) 9.7 ns d Rise Time t 53 ns r See specified Test Circuit Turn-OFF Delay Time t (off) 72 ns d Fall Time t 65 ns f Total Gate Charge Qg 8.4 nC Gate to Source Charge Qgs V =10V, V =4.5V, I =7A 1.0 nC DS GS D Gate to Drain Miller Charge Qgd 2.4 nC Forward Diode Voltage V I =7A, V=0V 0.81 1.2V SD S GS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit V =10V DD V IN 4.5V I =4A D 0V R =2.5 L V V IN D OUT PW=10s D.C.1% G P.G 50 MCH6437 S www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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